# NCE3406N

**Wuxi NCE Power Semiconductor** · MOSFETs · SOT-23-6

NCE3406N from Wuxi NCE Power Semiconductor, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, internally connected to pins 2, 5 and 6; VDS rated 30V and ID 6A continuous (IDM 30A pulsed). |
| 2 | D | passive | Drain, internally connected to pins 1, 5 and 6; VDS rated 30V and ID 6A continuous. |
| 3 | G | input | Gate, with VGS limited to ±12V absolute maximum and threshold of 0.7V min to 1.4V max at 250µA. |
| 4 | S | passive | Source of the N-channel MOSFET; diode forward current IS is 6A max. |
| 5 | D | passive | Drain, internally connected to pins 1, 2 and 6; VDS rated 30V and ID 6A continuous. |
| 6 | D | passive | Drain, internally connected to pins 1, 2 and 5; VDS rated 30V and ID 6A continuous. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V | TA=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TA=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous | ID |  |  | 6 | A | TA=25℃ unless otherwise noted | 1 |
| Drain Current-Pulsed | IDM |  |  | 30 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 2 | W | TA=25℃ unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 62.5 |  | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | 33 |  | V | VGS=0V, ID=250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V, VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V, VDS=0V | 1 |
| Gate Threshold Voltage | VGS(th) | 0.7 | 0.9 | 1.4 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 27 | 50 | mΩ | VGS=2.5V, ID=4A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 24 | 32 | mΩ | VGS=4.5V, ID=5A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 20.5 | 28 | mΩ | VGS=10V, ID=6A | 2 |
| Forward Transconductance | gFS | 10 |  |  | S | VDS=5V, ID=6A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=6A | 2 |
| Diode Forward Current | IS |  |  | 6 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `NCE3406N`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `nce3406n-etched.step` / `nce3406n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce3406n.step` / `nce3406n.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911301636997120) (8 pp, sha256 `4669d1bc9256d8f4`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce3406n-datasheet.pdf)