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NCE3406N

Public Made by Adom

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Wuxi NCE Power Semiconductor MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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NCE3406N

Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-6

NCE3406N from Wuxi NCE Power Semiconductor, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, internally connected to pins 2, 5 and 6; VDS rated 30V and ID 6A continuous (IDM 30A pulsed).
2 D passive Drain, internally connected to pins 1, 5 and 6; VDS rated 30V and ID 6A continuous.
3 G input Gate, with VGS limited to ±12V absolute maximum and threshold of 0.7V min to 1.4V max at 250µA.
4 S passive Source of the N-channel MOSFET; diode forward current IS is 6A max.
5 D passive Drain, internally connected to pins 1, 2 and 6; VDS rated 30V and ID 6A continuous.
6 D passive Drain, internally connected to pins 1, 2 and 5; VDS rated 30V and ID 6A continuous.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TA=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -12 12 V TA=25℃ unless otherwise noted 1
Drain Current-Continuous ID 6 A TA=25℃ unless otherwise noted 1
Drain Current-Pulsed IDM 30 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 2 W TA=25℃ unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 30 33 V VGS=0V, ID=250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 1
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 1
Gate Threshold Voltage VGS(th) 0.7 0.9 1.4 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 27 50 mΩ VGS=2.5V, ID=4A 2
Drain-Source On-State Resistance RDS(ON) 24 32 mΩ VGS=4.5V, ID=5A 2
Drain-Source On-State Resistance RDS(ON) 20.5 28 mΩ VGS=10V, ID=6A 2
Forward Transconductance gFS 10 S VDS=5V, ID=6A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=6A 2
Diode Forward Current IS 6 A 2

CAD (KiCad official)

  • Symbol: NCE3406N
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: nce3406n-etched.step / nce3406n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce3406n.step / nce3406n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256 4669d1bc9256d8f4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF