# NCE30H29D

**Wuxi NCE Power Semiconductor** · MOSFETs · TO-263-2L

NCE30H29D from Wuxi NCE Power Semiconductor, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with VGS rated ±20 V maximum and RDS(ON) specified at VGS=10 V. |
| 2 | D | passive | Drain (exposed tab, center lead removed); VDS rated 30 V, continuous ID 290 A (silicon limited), pulsed IDM 1160 A. |
| 3 | S | passive | Source; body diode continuous forward current IS up to 320 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous (Silicon Limited) | ID |  |  | 290 | A |  | 1 |
| Drain Current-Continuous (TC=100℃) (Silicon Limited) | ID(100℃) |  |  | 205 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 1160 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 270 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 1600 | mJ | Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC |  |  | 0.56 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 1.4 | 1.8 | mΩ | VGS=10V, ID=160A | 2 |
| Forward Transconductance | gFS | 50 |  |  | S | VDS=5V,ID=160A | 2 |
| Diode Forward Voltage | VSD |  | 0.85 | 1.2 | V | VGS=0V,IS=160A | 2 |
| Diode Forward Current | IS |  |  | 320 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `NCE30H29D`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files: `nce30h29d-etched.step` / `nce30h29d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce30h29d.step` / `nce30h29d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586206539711451136) (7 pp, sha256 `5c68568b544dac5c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce30h29d-datasheet.pdf)