component
NCE30H29D
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE30H29D
Wuxi NCE Power Semiconductor · MOSFETs · TO-263-2L
NCE30H29D from Wuxi NCE Power Semiconductor, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with VGS rated ±20 V maximum and RDS(ON) specified at VGS=10 V. |
| 2 | D | passive | Drain (exposed tab, center lead removed); VDS rated 30 V, continuous ID 290 A (silicon limited), pulsed IDM 1160 A. |
| 3 | S | passive | Source; body diode continuous forward current IS up to 320 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous (Silicon Limited) | ID | 290 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) (Silicon Limited) | ID(100℃) | 205 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 1160 | A | 1 | |||
| Maximum Power Dissipation | PD | 270 | W | 1 | |||
| Single pulse avalanche energy | EAS | 1600 | mJ | Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC | 0.56 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 1.4 | 1.8 | mΩ | VGS=10V, ID=160A | 2 | |
| Forward Transconductance | gFS | 50 | S | VDS=5V,ID=160A | 2 | ||
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | VGS=0V,IS=160A | 2 | |
| Diode Forward Current | IS | 320 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE30H29D - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files:
nce30h29d-etched.step/nce30h29d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce30h29d.step/nce30h29d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
5c68568b544dac5c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).