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NCE30H10G
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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCE30H10G
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCE30H10G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source), part of the 100A continuous drain current path with VDS rated 30V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source), part of the 100A continuous drain current path with VDS rated 30V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source), part of the 100A continuous drain current path with VDS rated 30V. |
| 4 | G | input | Gate terminal of the MOSFET with absolute maximum gate-source voltage of ±20V and threshold VGS(th) of 1.2V min to 2.5V max at 250μA. |
| 5 | D | passive | Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A. |
| 6 | D | passive | Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A. |
| 7 | D | passive | Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A. |
| 8 | D | passive | Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 100 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 70.7 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 300 | A | 1 | |||
| Maximum Power Dissipation | PD | 65 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.3 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 1.9 | 2.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 2.9 | 3.5 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Forward Transconductance | gFS | 32 | S | VDS=10V,ID=20A | 2 | ||
| Diode Forward Current | IS | 100 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE30H10G - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
nce30h10g-etched.step/nce30h10g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce30h10g.step/nce30h10g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
7bc1178c5b12c754, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCE30H10G
**Wuxi NCE Power Semiconductor** · MOSFETs · DFN5X6-8L
NCE30H10G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source), part of the 100A continuous drain current path with VDS rated 30V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source), part of the 100A continuous drain current path with VDS rated 30V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source), part of the 100A continuous drain current path with VDS rated 30V. |
| 4 | G | input | Gate terminal of the MOSFET with absolute maximum gate-source voltage of ±20V and threshold VGS(th) of 1.2V min to 2.5V max at 250μA. |
| 5 | D | passive | Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A. |
| 6 | D | passive | Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A. |
| 7 | D | passive | Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A. |
| 8 | D | passive | Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 100 | A | | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) | | | 70.7 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 300 | A | | 1 |
| Maximum Power Dissipation | PD | | | 65 | W | | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | 2.3 | | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 1.9 | 2.5 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 2.9 | 3.5 | mΩ | VGS=4.5V, ID=10A | 2 |
| Forward Transconductance | gFS | 32 | | | S | VDS=10V,ID=20A | 2 |
| Diode Forward Current | IS | | | 100 | A | | 2 |
## CAD (KiCad official)
- Symbol: `NCE30H10G`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `nce30h10g-etched.step` / `nce30h10g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce30h10g.step` / `nce30h10g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589836716673966080) (7 pp, sha256 `7bc1178c5b12c754`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nce30h10g-datasheet.pdf)