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NCE30H10G

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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE30H10G

Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L

NCE30H10G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pins 1-3 are source), part of the 100A continuous drain current path with VDS rated 30V.
2 S passive Source terminal of the N-channel MOSFET (pins 1-3 are source), part of the 100A continuous drain current path with VDS rated 30V.
3 S passive Source terminal of the N-channel MOSFET (pins 1-3 are source), part of the 100A continuous drain current path with VDS rated 30V.
4 G input Gate terminal of the MOSFET with absolute maximum gate-source voltage of ±20V and threshold VGS(th) of 1.2V min to 2.5V max at 250μA.
5 D passive Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A.
6 D passive Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A.
7 D passive Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A.
8 D passive Drain terminal tied to the exposed drain pad (pins 5-8 are drain), with VDS maximum of 30V and pulsed drain current up to 300A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 100 A 1
Drain Current-Continuous (TC=100℃) ID (100℃) 70.7 A TC=100℃ 1
Pulsed Drain Current IDM 300 A 1
Maximum Power Dissipation PD 65 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 2.3 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 1.9 2.5 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 2.9 3.5 mΩ VGS=4.5V, ID=10A 2
Forward Transconductance gFS 32 S VDS=10V,ID=20A 2
Diode Forward Current IS 100 A 2

CAD (KiCad official)

  • Symbol: NCE30H10G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: nce30h10g-etched.step / nce30h10g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce30h10g.step / nce30h10g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 7bc1178c5b12c754, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF