# NCE3018AS

**Wuxi NCE Power Semiconductor** · MOSFETs · SOP-8

NCE3018AS from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; VDS max 30V, continuous ID 18A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; VDS max 30V, continuous ID 18A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; VDS max 30V, continuous ID 18A. |
| 4 | G | input | Gate terminal; VGS max ±20V, threshold 0.9V min to 1.4V max at VDS=VGS, ID=250μA. |
| 5 | D | passive | Drain terminal; VDS max 30V, continuous ID 18A, pulsed IDM 48A. |
| 6 | D | passive | Drain terminal; VDS max 30V, continuous ID 18A, pulsed IDM 48A. |
| 7 | D | passive | Drain terminal; VDS max 30V, continuous ID 18A, pulsed IDM 48A. |
| 8 | D | passive | Drain terminal; VDS max 30V, continuous ID 18A, pulsed IDM 48A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 18 | A |  | 1 |
| Drain Current-Continuous | ID (100℃) |  |  | 12.7 | A | TA=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 48 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 3 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 42 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | 33 |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.9 | 1.1 | 1.4 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 5.5 | 7 | mΩ | VGS=10V, ID=12A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 6.5 | 10 | mΩ | VGS=4.5V, ID=10A | 2 |
| Forward Transconductance | gFS | 5 |  |  | S | VDS=5V, ID=12A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=18A | 2 |
| Diode Forward Current | IS |  |  | 18 | A | Note 2 (surface mounted on FR4 board, t ≤ 10 sec) | 2 |

## CAD (KiCad official)

- Symbol: `NCE3018AS`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `nce3018as-etched.step` / `nce3018as-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce3018as.step` / `nce3018as.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881132821884928) (7 pp, sha256 `ebeac8ad83051a86`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce3018as-datasheet.pdf)