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NCE3018AS

Public Made by Adom

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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE3018AS

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE3018AS from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; VDS max 30V, continuous ID 18A.
2 S passive Source terminal of the N-channel MOSFET; VDS max 30V, continuous ID 18A.
3 S passive Source terminal of the N-channel MOSFET; VDS max 30V, continuous ID 18A.
4 G input Gate terminal; VGS max ±20V, threshold 0.9V min to 1.4V max at VDS=VGS, ID=250μA.
5 D passive Drain terminal; VDS max 30V, continuous ID 18A, pulsed IDM 48A.
6 D passive Drain terminal; VDS max 30V, continuous ID 18A, pulsed IDM 48A.
7 D passive Drain terminal; VDS max 30V, continuous ID 18A, pulsed IDM 48A.
8 D passive Drain terminal; VDS max 30V, continuous ID 18A, pulsed IDM 48A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 18 A 1
Drain Current-Continuous ID (100℃) 12.7 A TA=100℃ 1
Pulsed Drain Current IDM 48 A 1
Maximum Power Dissipation PD 3 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 42 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 30 33 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.9 1.1 1.4 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 5.5 7 mΩ VGS=10V, ID=12A 2
Drain-Source On-State Resistance RDS(ON) 6.5 10 mΩ VGS=4.5V, ID=10A 2
Forward Transconductance gFS 5 S VDS=5V, ID=12A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=18A 2
Diode Forward Current IS 18 A Note 2 (surface mounted on FR4 board, t ≤ 10 sec) 2

CAD (KiCad official)

  • Symbol: NCE3018AS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce3018as-etched.step / nce3018as-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce3018as.step / nce3018as.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 ebeac8ad83051a86, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF