NCE3010S

{
  "schema_version": 1,
  "type": "component",
  "slug": "nce3010s",
  "title": "NCE3010S",
  "brief": "Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "nce3010s",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "NCE3010S",
    "manufacturer": "Wuxi NCE Power Semiconductor",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881119382659072",
    "parts": {
      "symbol": "nce3010s.kicad_sym",
      "footprint": "nce3010s.kicad_mod",
      "model_3d": "nce3010s-hero.glb",
      "model_3d_plain": "nce3010s.glb",
      "model_3d_step": "nce3010s-etched.step",
      "model_3d_step_plain": "nce3010s.step",
      "lbr": "nce3010s.lbr"
    },
    "distributor_links": {
      "lcsc": "C126152"
    },
    "distributor_check": {
      "checked_at": "2026-10-10T00:30:37Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, tied to pins 2 and 3; drain-source voltage rated 30 V."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, tied to pins 1 and 3; continuous drain current rated 10 A."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, tied to pins 1 and 2; also the anode side of the body diode (IS max 10 A)."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V and threshold is 1 V min to 3 V max at 250 µA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied to pins 6, 7 and 8; RDS(ON) is below 12 mΩ at VGS=10 V."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied to pins 5, 7 and 8; pulsed drain current is 50 A max."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied to pins 5, 6 and 8; drain-source voltage rated 30 V."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied to pins 5, 6 and 7; RDS(ON) is below 16 mΩ at VGS=4.5 V."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet's schematic shows a single S, G and D terminal, numbered (3) S, (1) G and (2) D. These",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 7,
        "cost_usd": 0.2402,
        "at": "2026-10-10T00:25:47"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881119382659072",
        "pages": 7,
        "sha256": "1101a2ea5cdeba75",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "nce3010s.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          6,
          4.9,
          1.75
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
        "checked": "2026-10-10",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "nce3010s-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          6,
          4.9,
          1.75
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "ad262611f7efdc7cb4bbfdf34dc21913cd56943fda177c73b2d9a63063db6f81",
        "checked": "2026-10-10",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Wuxi NCE Power Semiconductor",
      "Package": "SOP-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "1101a2ea5cdeba75",
      "rows": [
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Continuous",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 10,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Continuous",
          "symbol": "ID (100℃)",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 6,
          "conditions": "TC=100℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 2.5,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ,TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Case (Note 2)",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 30,
          "typ": 33,
          "max": null,
          "conditions": "VGS=0V ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=30V,VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V,VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1,
          "typ": 1.6,
          "max": 3,
          "conditions": "VDS=VGS,ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 8,
          "max": 12,
          "conditions": "VGS=10V, ID=10A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 11,
          "max": 16,
          "conditions": "VGS=4.5V, ID=5A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Forward Transconductance",
          "symbol": "gFS",
          "kind": "electrical",
          "unit": "S",
          "min": 15,
          "typ": null,
          "max": null,
          "conditions": "VDS=5V,ID=10A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.2,
          "conditions": "VGS=0V,IS=10A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 10,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "nce3010s"
  ],
  "discovery_pitch": "NCE3010S (Wuxi NCE Power Semiconductor) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "nce3010s.kicad_sym",
    "nce3010s.kicad_mod",
    "nce3010s.glb",
    "nce3010s.step",
    "nce3010s.lbr",
    "docs/hero.png",
    "docs/nce3010s-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "nce3010s-hero.glb",
    "nce3010s-hero.overlay.json"
  ],
  "visibility": {
    "public": true
  }
}