component

NCE3010S

Public Made by Adom

by adom

Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsnce3010sfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 28d ago
viewers nce3010s: viewers · Ray 28d ago
nce3010s-etched.glb nce3010s: factory component page (tier=lcsc) · Ray 28d ago
nce3010s-etched.step nce3010s: factory component page (tier=lcsc) · Ray 28d ago
nce3010s-hero.glb nce3010s: hero GLB from the etched model (keeps the MPN mark) · Ray 28d ago
nce3010s-hero.overlay.json Publish 0.1.0 · Ray 28d ago
nce3010s.glb Publish 0.1.0 · Ray 28d ago
nce3010s.kicad_mod Publish 0.1.0 · Ray 28d ago
nce3010s.kicad_sym Publish 0.1.0 · Ray 28d ago
nce3010s.lbr Publish 0.1.0 · Ray 28d ago
nce3010s.step Publish 0.1.0 · Ray 28d ago
package.json Publish 0.1.0 · Ray 28d ago
page.json nce3010s: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 24d ago
README.md nce3010s: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 24d ago

NCE3010S

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE3010S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied to pins 2 and 3; drain-source voltage rated 30 V.
2 S passive Source of the N-channel MOSFET, tied to pins 1 and 3; continuous drain current rated 10 A.
3 S passive Source of the N-channel MOSFET, tied to pins 1 and 2; also the anode side of the body diode (IS max 10 A).
4 G input Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V and threshold is 1 V min to 3 V max at 250 µA.
5 D passive Drain of the N-channel MOSFET, tied to pins 6, 7 and 8; RDS(ON) is below 12 mΩ at VGS=10 V.
6 D passive Drain of the N-channel MOSFET, tied to pins 5, 7 and 8; pulsed drain current is 50 A max.
7 D passive Drain of the N-channel MOSFET, tied to pins 5, 6 and 8; drain-source voltage rated 30 V.
8 D passive Drain of the N-channel MOSFET, tied to pins 5, 6 and 7; RDS(ON) is below 16 mΩ at VGS=4.5 V.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 10 A 1
Drain Current-Continuous ID (100℃) 6 A TC=100℃ 1
Pulsed Drain Current IDM 50 A 1
Maximum Power Dissipation PD 2.5 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case (Note 2) RθJC 50 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 33 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.6 3 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 8 12 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance RDS(ON) 11 16 mΩ VGS=4.5V, ID=5A 2
Forward Transconductance gFS 15 S VDS=5V,ID=10A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=10A 2
Diode Forward Current IS 10 A 2

CAD (KiCad official)

  • Symbol: NCE3010S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce3010s-etched.step / nce3010s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce3010s.step / nce3010s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 1101a2ea5cdeba75, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF