# NCE3008M

**Wuxi NCE Power Semiconductor** · MOSFETs · SOT-89-3L

NCE3008M from Wuxi NCE Power Semiconductor, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V absolute maximum, with RDS(ON) specified at VGS=10V and 4.5V and threshold of 1.0 to 2.4 V. |
| 2 | D | passive | Drain; drain-source voltage is 30 V maximum with 8 A continuous and 30 A pulsed drain current. |
| 3 | S | passive | Source; connected to the body diode anode with diode forward current IS of 8 A maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 8 | A | TA=25℃ unless otherwise noted | 1 |
| Drain Current-Pulsed (Note 1) | IDM |  |  | 30 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 3.5 | W | TA=25℃ unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA |  |  | 35 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V ID=250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V,VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) |  | 19.8 | 22.5 | mΩ | VGS=10V, ID=8A | 2 |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) |  | 27 | 31 | mΩ | VGS=4.5V, ID=6A | 2 |
| Diode Forward Voltage (Note 3) | VSD |  |  | 1.2 | V | VGS=0V,IS=8A | 2 |
| Diode Forward Current (Note 2) | IS |  |  | 8 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `NCE3008M`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files: `nce3008m-etched.step` / `nce3008m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce3008m.step` / `nce3008m.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912736176640000) (7 pp, sha256 `fc55219b06da2c34`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce3008m-datasheet.pdf)