component
NCE3008M
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE3008M
Wuxi NCE Power Semiconductor · MOSFETs · SOT-89-3L
NCE3008M from Wuxi NCE Power Semiconductor, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V absolute maximum, with RDS(ON) specified at VGS=10V and 4.5V and threshold of 1.0 to 2.4 V. |
| 2 | D | passive | Drain; drain-source voltage is 30 V maximum with 8 A continuous and 30 A pulsed drain current. |
| 3 | S | passive | Source; connected to the body diode anode with diode forward current IS of 8 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 8 | A | TA=25℃ unless otherwise noted | 1 | ||
| Drain Current-Pulsed (Note 1) | IDM | 30 | A | 1 | |||
| Maximum Power Dissipation | PD | 3.5 | W | TA=25℃ unless otherwise noted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 35 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | 19.8 | 22.5 | mΩ | VGS=10V, ID=8A | 2 | |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | 27 | 31 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Diode Forward Voltage (Note 3) | VSD | 1.2 | V | VGS=0V,IS=8A | 2 | ||
| Diode Forward Current (Note 2) | IS | 8 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE3008M - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
nce3008m-etched.step/nce3008m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce3008m.step/nce3008m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
fc55219b06da2c34, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).