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NCE2333Y

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Wuxi NCE Power Semiconductor MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE2333Y

Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-3L

NCE2333Y from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±12V, with RDS(ON) specified down to VGS=-2.5V and threshold VGS(th) of -0.4V to -1.0V.
2 S passive Source of the P-channel MOSFET; continuous drain current is -6A and the body diode forward current IS is -6A max.
3 D passive Drain of the P-channel MOSFET; drain-source voltage is -12V max, continuous current -6A and pulsed current -20A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current -Continuous ID -6 A TA=25℃ 1
Drain Current -Pulsed (Note 1) IDM -20 A TA=25℃ 1
Maximum Power Dissipation PD 1.8 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TA=25℃ 1
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 69 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS -12 V VGS=0V ID=-250μA 1
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-12V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.65 -1 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 19 30 mΩ VGS=-4.5V, ID=-6A 2
Drain-Source On-State Resistance RDS(ON) 26 45 mΩ VGS=-2.5V, ID=-5A 2
Forward Transconductance gFS 17 S VDS=-5V,ID=-6A 2
Diode Forward Voltage (Note 3) VSD -1.2 V VGS=0V,IS=-1.0A 2
Diode Forward Current (Note 2) IS -6 A 2

CAD (KiCad official)

  • Symbol: NCE2333Y
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: nce2333y-etched.step / nce2333y-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce2333y.step / nce2333y.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 33cbb82893892c1f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF