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NCE2333Y
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE2333Y
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-3L
NCE2333Y from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12V, with RDS(ON) specified down to VGS=-2.5V and threshold VGS(th) of -0.4V to -1.0V. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current is -6A and the body diode forward current IS is -6A max. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is -12V max, continuous current -6A and pulsed current -20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -12 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current -Continuous | ID | -6 | A | TA=25℃ | 1 | ||
| Drain Current -Pulsed (Note 1) | IDM | -20 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.8 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | TA=25℃ | 1 | |
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 69 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -12 | V | VGS=0V ID=-250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-12V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.65 | -1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 19 | 30 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 26 | 45 | mΩ | VGS=-2.5V, ID=-5A | 2 | |
| Forward Transconductance | gFS | 17 | S | VDS=-5V,ID=-6A | 2 | ||
| Diode Forward Voltage (Note 3) | VSD | -1.2 | V | VGS=0V,IS=-1.0A | 2 | ||
| Diode Forward Current (Note 2) | IS | -6 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE2333Y - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
nce2333y-etched.step/nce2333y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce2333y.step/nce2333y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
33cbb82893892c1f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).