# NCE2301

**Wuxi NCE Power Semiconductor** · MOSFETs · SOT-23

NCE2301 from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12V, with threshold of -0.4V to -1V at ID=-250μA and drive down to -2.5V. |
| 2 | S | passive | Source of the P-channel MOSFET; drain-source voltage is rated -20V and continuous current -3A. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS rated -20V, continuous ID -3A, pulsed IDM -10A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | -24 |  | V | VGS=0V ID=-250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-20V,VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance (VGS=-4.5V) | RDS(ON) |  | 64 | 110 | mΩ | VGS=-4.5V, ID=-3A | 2 |
| Drain-Source On-State Resistance (VGS=-2.5V) | RDS(ON) |  | 89 | 140 | mΩ | VGS=-2.5V, ID=-2A | 2 |
| Forward Transconductance | gFS | 5 |  |  | S | VDS=-5V,ID=-2A | 2 |
| Total Gate Charge | Qg |  | 3.3 | 12 | nC |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V,IS=1.3A | 2 |
| Diode Forward Current | IS |  |  | -3 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | -3 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | -10 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 125 |  | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 1 |

## CAD (KiCad official)

- Symbol: `NCE2301`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nce2301-etched.step` / `nce2301-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce2301.step` / `nce2301.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586180937734766592) (7 pp, sha256 `53f668e7bb2209d4`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce2301-datasheet.pdf)