component
NCE2301
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
nce2301: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ NCE2301 from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descripti | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | -20 | -24 | | V | VGS=0V ID=-250μA | 1 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-20V,VGS=0V | 1 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 2 |+| Drain-Source On-State Resistance (VGS=-4.5V) | RDS(ON) | | 64 | 110 | mΩ | VGS=-4.5V, ID=-3A | 2 |+| Drain-Source On-State Resistance (VGS=-2.5V) | RDS(ON) | | 89 | 140 | mΩ | VGS=-2.5V, ID=-2A | 2 |+| Forward Transconductance | gFS | 5 | | | S | VDS=-5V,ID=-2A | 2 |+| Total Gate Charge | Qg | | 3.3 | 12 | nC | | 2 |+| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V,IS=1.3A | 2 |+| Diode Forward Current | IS | | | -3 | A | | 2 |+| Drain-Source Voltage | VDS | | | -20 | V | | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Drain Current-Continuous | ID | | | -3 | A | | 1 |+| Drain Current-Pulsed | IDM | | | -10 | A | | 1 |+| Maximum Power Dissipation | PD | | | 1 | W | | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | 125 | | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 1 |+ ## CAD (KiCad official) - Symbol: `NCE2301`
page.json+212−1@@ -147,6 +147,217 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "53f668e7bb2209d4",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": -24,+ "max": null,+ "conditions": "VGS=0V ID=-250μA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-20V,VGS=0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±12V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.4,+ "typ": -0.7,+ "max": -1,+ "conditions": "VDS=VGS,ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (VGS=-4.5V)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 64,+ "max": 110,+ "conditions": "VGS=-4.5V, ID=-3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (VGS=-2.5V)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 89,+ "max": 140,+ "conditions": "VGS=-2.5V, ID=-2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "VDS=-5V,ID=-2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.3,+ "max": 12,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "VGS=0V,IS=1.3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 125,+ "max": null,+ "conditions": "Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2)",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +399,4 @@ "visibility": { "public": true }-}+}