main
Ray nce20p70g: specified limits as data (metadata.characteristics, 19 rows from the datasheet) b54f148 16d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "nce20p70g",
  "title": "NCE20P70G",
  "brief": "Wuxi NCE Power Semiconductor MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "nce20p70g",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "NCE20P70G",
    "manufacturer": "Wuxi NCE Power Semiconductor",
    "package": "DFN5x6-8L",
    "pin_count": 9,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588910001762521088",
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      "model_3d_step": "nce20p70g-etched.step",
      "model_3d_step_plain": "nce20p70g.step",
      "lbr": "nce20p70g.lbr"
    },
    "distributor_links": {
      "lcsc": "C193355"
    },
    "distributor_check": {
      "checked_at": "2026-10-12T23:28:55Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET; pins 1-3 are tied together, with VDS rated -20V."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET; pins 1-3 are tied together, with VDS rated -20V."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET; pins 1-3 are tied together, with VDS rated -20V."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the P-channel MOSFET, rated for VGS of ±10V, with threshold of -0.4V to -1.0V."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pin assignment drawing on page 1 shows no exposed thermal pad. The package drawing on page 5 was",
          "exposed pad 9 added from the footprint",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 6,
        "cost_usd": 0.2249,
        "at": "2026-10-12T23:28:41"
      },
      "datasheet": {
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        "pages": 6,
        "sha256": "7f73fefb1ff76ac1",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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      "footprint": "viewers/footprint.html"
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        "role": "plain",
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        "units": "mm",
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        "seat": "z = 0",
        "extents_mm": [
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          4.98,
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-10-12",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
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        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "Wuxi NCE Power Semiconductor",
      "Package": "DFN5x6-8L",
      "Category": "Transistors/Thyristors",
      "Pins": "9"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "7f73fefb1ff76ac1",
      "rows": [
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": null,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -10,
          "typ": null,
          "max": 10,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Continuous",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -70,
          "typ": null,
          "max": null,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Continuous",
          "symbol": "ID (100℃)",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -49.5,
          "typ": null,
          "max": null,
          "conditions": "TC=100℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -280,
          "typ": null,
          "max": null,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 130,
          "conditions": "",
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          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ,TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V ID=-250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=-20V,VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±10V,VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": -0.4,
          "typ": -0.6,
          "max": -1,
          "conditions": "VDS=VGS,ID=-250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 2.3,
          "max": 3,
          "conditions": "VGS=-4.5V, ID=-20A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 2.8,
          "max": 4,
          "conditions": "VGS=-2.5V, ID=-20A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 3.8,
          "max": 8,
          "conditions": "VGS=-1.8V, ID=-20A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Forward Transconductance",
          "symbol": "gFS",
          "kind": "electrical",
          "unit": "S",
          "min": 100,
          "typ": null,
          "max": null,
          "conditions": "VDS=-5V,ID=-20A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": -1.2,
          "conditions": "VGS=0V,IS=-20A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": -70,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Derating factor",
          "symbol": "",
          "kind": "thermal",
          "unit": "W/℃",
          "min": null,
          "typ": 0.64,
          "max": null,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 1.6,
          "max": null,
          "conditions": "Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec",
          "source_page": 1,
          "source": "datasheet"
        }
      ]
    }
  },
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  "discovery_triggers": [
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  ],
  "discovery_pitch": "NCE20P70G (Wuxi NCE Power Semiconductor) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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}