component
NCE20P70G
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNCE20P70G
Wuxi NCE Power Semiconductor · MOSFETs · DFN5x6-8L
NCE20P70G from Wuxi NCE Power Semiconductor, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; pins 1-3 are tied together, with VDS rated -20V. |
| 2 | S | passive | Source of the P-channel MOSFET; pins 1-3 are tied together, with VDS rated -20V. |
| 3 | S | passive | Source of the P-channel MOSFET; pins 1-3 are tied together, with VDS rated -20V. |
| 4 | G | input | Gate of the P-channel MOSFET, rated for VGS of ±10V, with threshold of -0.4V to -1.0V. |
| 5 | D | passive | Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A. |
| 6 | D | passive | Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A. |
| 7 | D | passive | Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A. |
| 8 | D | passive | Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current-Continuous | ID | -70 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | -49.5 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -280 | A | 1 | |||
| Maximum Power Dissipation | PD | 130 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 2.3 | 3 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 2.8 | 4 | mΩ | VGS=-2.5V, ID=-20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 3.8 | 8 | mΩ | VGS=-1.8V, ID=-20A | 2 | |
| Forward Transconductance | gFS | 100 | S | VDS=-5V,ID=-20A | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-20A | 2 | ||
| Diode Forward Current | IS | -70 | A | 2 | |||
| Derating factor | 0.64 | W/℃ | 1 | ||||
| Thermal Resistance, Junction-to-Case | RθJC | 1.6 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
NCE20P70G - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
nce20p70g-etched.step/nce20p70g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce20p70g.step/nce20p70g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256
7f73fefb1ff76ac1, retrieved 2026-10-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).