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Ray nce20p70g: specified limits as data (metadata.characteristics, 19 rows from the datasheet) b54f148 16d ago

NCE20P70G

Wuxi NCE Power Semiconductor · MOSFETs · DFN5x6-8L

NCE20P70G from Wuxi NCE Power Semiconductor, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; pins 1-3 are tied together, with VDS rated -20V.
2 S passive Source of the P-channel MOSFET; pins 1-3 are tied together, with VDS rated -20V.
3 S passive Source of the P-channel MOSFET; pins 1-3 are tied together, with VDS rated -20V.
4 G input Gate of the P-channel MOSFET, rated for VGS of ±10V, with threshold of -0.4V to -1.0V.
5 D passive Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A.
6 D passive Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A.
7 D passive Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A.
8 D passive Drain of the P-channel MOSFET; pins 5-8 are tied together, carrying continuous ID of -70A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -10 10 V 1
Drain Current-Continuous ID -70 A 1
Drain Current-Continuous ID (100℃) -49.5 A TC=100℃ 1
Pulsed Drain Current IDM -280 A 1
Maximum Power Dissipation PD 130 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=-20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±10V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.6 -1 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 2.3 3 mΩ VGS=-4.5V, ID=-20A 2
Drain-Source On-State Resistance RDS(ON) 2.8 4 mΩ VGS=-2.5V, ID=-20A 2
Drain-Source On-State Resistance RDS(ON) 3.8 8 mΩ VGS=-1.8V, ID=-20A 2
Forward Transconductance gFS 100 S VDS=-5V,ID=-20A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-20A 2
Diode Forward Current IS -70 A 2
Derating factor 0.64 W/℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.6 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: NCE20P70G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: nce20p70g-etched.step / nce20p70g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce20p70g.step / nce20p70g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256 7f73fefb1ff76ac1, retrieved 2026-10-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF