component
NCE01P03S
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCE01P03S
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE01P03S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; pins 1-3 are source, and the datasheet gives the continuous drain current as -3A at VDS=-100V. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the same source terminal as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, connected to the same source terminal as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; the datasheet gives a VGS rating of ±20V and a gate threshold of -1V min to -3V max (ESD protected). |
| 5 | D | passive | Drain of the P-channel MOSFET; pins 5-8 are drain, and the datasheet gives VDS=-100V maximum. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 170 | 200 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 200 | 230 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Forward Transconductance | gFS | 2 | S | VDS=-5V,ID=-3A | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-3A | 2 | ||
| Diode Forward Current | IS | -3 | A | Note 2 | 2 | ||
| Drain-Source Voltage | VDS | -100 | V | TC=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ unless otherwise noted | 1 | |
| Drain Current-Continuous | ID | -3 | A | TC=25℃ unless otherwise noted | 1 | ||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | -2.1 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | TC=25℃ unless otherwise noted | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TC=25℃ unless otherwise noted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
NCE01P03S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce01p03s-etched.step/nce01p03s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce01p03s.step/nce01p03s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
96e597bd98cfd593, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCE01P03S
**Wuxi NCE Power Semiconductor** · MOSFETs · SOP-8
NCE01P03S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; pins 1-3 are source, and the datasheet gives the continuous drain current as -3A at VDS=-100V. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the same source terminal as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, connected to the same source terminal as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; the datasheet gives a VGS rating of ±20V and a gate threshold of -1V min to -3V max (ESD protected). |
| 5 | D | passive | Drain of the P-channel MOSFET; pins 5-8 are drain, and the datasheet gives VDS=-100V maximum. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 6 and 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -100 | | | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=-100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | μA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 170 | 200 | mΩ | VGS=-10V, ID=-3A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 200 | 230 | mΩ | VGS=-4.5V, ID=-2A | 2 |
| Forward Transconductance | gFS | 2 | | | S | VDS=-5V,ID=-3A | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V,IS=-3A | 2 |
| Diode Forward Current | IS | | | -3 | A | Note 2 | 2 |
| Drain-Source Voltage | VDS | -100 | | | V | TC=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous | ID | -3 | | | A | TC=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) | -2.1 | | | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | -20 | | | A | TC=25℃ unless otherwise noted | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TC=25℃ unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 50 | | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
## CAD (KiCad official)
- Symbol: `NCE01P03S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `nce01p03s-etched.step` / `nce01p03s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce01p03s.step` / `nce01p03s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884820138713088) (7 pp, sha256 `96e597bd98cfd593`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nce01p03s-datasheet.pdf)