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NCE01P03S

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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE01P03S

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE01P03S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; pins 1-3 are source, and the datasheet gives the continuous drain current as -3A at VDS=-100V.
2 S passive Source of the P-channel MOSFET, connected to the same source terminal as pins 1 and 3.
3 S passive Source of the P-channel MOSFET, connected to the same source terminal as pins 1 and 2.
4 G input Gate of the P-channel MOSFET; the datasheet gives a VGS rating of ±20V and a gate threshold of -1V min to -3V max (ESD protected).
5 D passive Drain of the P-channel MOSFET; pins 5-8 are drain, and the datasheet gives VDS=-100V maximum.
6 D passive Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=-100V,VGS=0V 2
Gate-Body Leakage Current IGSS -10 10 μA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.9 -3 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 170 200 mΩ VGS=-10V, ID=-3A 2
Drain-Source On-State Resistance RDS(ON) 200 230 mΩ VGS=-4.5V, ID=-2A 2
Forward Transconductance gFS 2 S VDS=-5V,ID=-3A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-3A 2
Diode Forward Current IS -3 A Note 2 2
Drain-Source Voltage VDS -100 V TC=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TC=25℃ unless otherwise noted 1
Drain Current-Continuous ID -3 A TC=25℃ unless otherwise noted 1
Drain Current-Continuous (TC=100℃) ID (100℃) -2.1 A TC=100℃ 1
Pulsed Drain Current IDM -20 A TC=25℃ unless otherwise noted 1
Maximum Power Dissipation PD 2.5 W TC=25℃ unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 50 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: NCE01P03S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce01p03s-etched.step / nce01p03s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce01p03s.step / nce01p03s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 96e597bd98cfd593, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF