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NCD57080CDR2G

onsemi · Gate Drive ICs · SOIC-8

NCD57080CDR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Input side power supply that needs a good quality bypass capacitor to GND1 placed close to the pin, with UVLO enabling operation when the supply is above VUVLO1-OUT-ON (absolute maximum 22 V).
2 IN+ input Non-inverted gate driver input, internally clamped to GND1 with an equivalent 125 kΩ pull-down resistor so the output is low with no input, and a minimum pulse width is required before OUTH/OUTL respond.
3 IN− input Inverted gate driver input, internally clamped to VDD1 with an equivalent 125 kΩ pull-up resistor so the output is low with no input, and a minimum pulse width is required before OUTH/OUTL respond.
4 GND1 power_in Input side ground reference.
5 VDD2 power_in Output side positive power supply, operating from the UVLO2 threshold up to its maximum (absolute maximum 32 V), needing a good quality bypass capacitor to GND2 placed close to the pin.
6 OUTH output Driver high output that provides the drive voltage and source current to the IGBT/MOSFET gate (6.5 A peak source).
7 OUTL output Driver low output that provides the drive voltage and sink current to the IGBT/MOSFET gate (6.5 A peak sink) and is actively pulled low during start-up.
8 GND2 power_in Output side gate drive reference connecting to the IGBT emitter or MOSFET source.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Power Supply Chip
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage, Input Side VDD1-GND1 -0.3 22 V 6
Positive Power Supply, Output Side VDD2-GND2 -0.3 32 V 6
Gate-driver Output Sourcing Current IPK-SRC 6.5 A max pulse width = 10 µs, max duty cycle = 0.2%, VDD2 = 15 V, VEE2 = 0 V 6
Gate-driver Output Sinking Current IPK-SNK 6.5 A max pulse width = 10 µs, max duty cycle = 0.2%, VDD2 = 15 V, VEE2 = 0 V 6
Maximum Short Circuit Clamping Time tCLP 10 µs IOUT_CLAMP = 500 mA 6
Power Dissipation (SOIC-8 Narrow) PD 1315 mW 6
Maximum Junction Temperature TJ(max) -40 150 °C 7
Storage Temperature Range TSTG -65 150 °C 7
ESD Capability, Human Body Model ESDHBM -2 2 kV 7
ESD Capability, Charged Device Model ESDCDM -2 2 kV 7
Lead Temperature Soldering Reflow, Pb-Free TSLD 260 °C 7
Supply Voltage, Input Side (operating max) VDD1-GND1 20 V 7
Positive Power Supply, Output Side (operating max) VDD2-GND2 30 V 7
Common Mode Transient Immunity /dVISO/dt/ 100 kV/µs tested by ±1500 V pulses up to 100 kV/µs 7
Ambient Temperature TA -40 125 °C 7
Thermal Resistance, Junction-to-Air (4-Layer) RθJA 95 °C/W SOIC-8 narrow body, 100 mm2 1 oz copper, FR4 7
Thermal Resistance, Junction-to-Air (1-Layer) RθJA 175 °C/W SOIC-8 narrow body, 100 mm2 1 oz copper, FR4 7
UVLO1 Output Enabled VUVLO1-OUT-ON 3.1 V 8
UVLO1 Output Disabled VUVLO1-OUT-OFF 2.4 V 8
UVLO1 Hysteresis VUVLO1-HYST 0.1 V 8
UVLO2 Output Enabled VUVLO2-OUT-ON 12.4 12.9 13.4 V NCx57080y 8
UVLO2 Output Disabled VUVLO2-OUT-OFF 11.5 12 12.5 V NCx57080y 8
UVLO2 Hysteresis VUVLO2-HYST 0.7 1 V 8
Input Supply Quiescent Current IDD1-0-3.3 2 mA IN+ = Low, IN- = Low, VDD1 = 3.3 V 8
Input Supply Current IDD1-100-5 5.5 mA IN+ = High, IN- = Low 8
Output Positive Supply Quiescent Current IDD2-0 2 mA IN+ = Low, IN- = Low, no load 8
Output Positive Supply Current IDD2-100 2 mA IN+ = High, IN- = Low, no load 8
IN- Input Current IIN-L-5 100 µA VIN- = 0 V 8
IN+ Input Current IIN+H-5 100 µA VIN+ = VDD1 = 5 V 8
Input Pulse Width for Guaranteed No Response tON-MIN1 10 ns 8
Input Pulse Width for Guaranteed Response tON-MIN2 40 ns 8
Output Low State VOUTL1 0.15 0.3 V ISINK = 200 mA 9
Output Low State VOUTL2 0.8 V ISINK = 1.0 A, TA = 25°C 9
Output High State VOUTH1 0.2 0.35 V ISRC = 200 mA 9
Output High State VOUTH2 1 V ISRC = 1.0 A, TA = 25°C 9
Clamping Voltage, Sourcing VCLAMP-OUTH 0.7 1.3 V IN+ = Low, IN- = High, ICLAMP-OUT/OUTH = 500 mA 9
Clamping Voltage, Sinking VCLAMP-OUTL 0.8 1.5 V IN+ = High, IN- = Low, ICLAMP-OUTL = 500 mA 9
Propagation Delay to Output High tPD-ON-3.3 40 60 90 ns VDD1 = VIN+ = 3.3V, VIN- = 0 V, CLOAD = 10 nF 9
Propagation Delay to Output Low tPD-OFF-3.3 40 60 90 ns VDD1 = VIN+ = 3.3 V, VIN- = 0 V, CLOAD = 10 nF 9
Propagation Delay Distortion tDISTORT -25 25 ns TA = -40°C to 125°C, PW > 150 ns 9
Propagation Delay Distortion tDISTORT 0 ns TA = 25°C, PW > 150 ns 9
Prop Delay Distortion between Parts tDISTORT_TOT -30 0 30 ns PW > 150 ns 9
Rise Time tRISE 13 ns CLOAD = 1 nF, 10% to 90% of Output Change 9
Fall Time tFALL 13 ns CLOAD = 1 nF, 90% to 10% of Output Change 9
Peak Driver Current, Sink IPK-SNK1 6.5 A 9
Peak Driver Current, Source IPK-SRC1 6.5 A 9

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing ABS RIO Insulation Resistance at TS, VIO = 500 V 109 Table 3. ABSOLUTE MAXIMUM RATINGS (Note 1) 6

CAD (KiCad official)

  • Symbol: NCD57080CDR2G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ncd57080cdr2g-etched.step / ncd57080cdr2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncd57080cdr2g.step / ncd57080cdr2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (24 pp, sha256 748b3eca1fc6dfa7, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF