component
NCD57080BDR2G
Public Made by Adomby adom
onsemi Gate Drive ICs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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NCD57080BDR2G
onsemi · Gate Drive ICs · SOIC-8
NCD57080BDR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD1 | power_in | Input-side power supply; a good quality bypass capacitor is required from this pin to GND1, placed close to the pins, and the UVLO circuit enables operation at power-on when a typical supply above VUVLO1-OUT-ON is present. |
| 2 | IN+ | input | Non-inverting gate driver input, internally clamped to GND1 with an equivalent 125 kΩ pull-down to keep the output low without an input signal, and a minimum positive or negative pulse width is required before OUT responds. |
| 3 | IN− | input | Inverting gate driver input, internally clamped to VDD1 with an equivalent 125 kΩ pull-up to keep the output low without an input signal, and a minimum positive or negative pulse width is required before OUT responds. |
| 4 | GND1 | power_in | Input-side ground reference. |
| 5 | VDD2 | power_in | Output-side positive power supply whose operating range runs from UVLO2 to its maximum allowed value; a good quality bypass capacitor is required from this pin to GND2, placed close to the pins. |
| 6 | OUT | output | Driver output that provides the drive voltage and source/sink current to the IGBT/MOSFET gate, rated for 6.5 A peak sourcing and 6.5 A peak sinking (pulsed), and is actively pulled low during start-up. |
| 7 | GND2 | power_in | Output-side gate drive reference connected to the IGBT emitter or MOSFET source (pin 7 on version B; pin 8 on versions A and C). |
| 8 | VEE2 | power_in | Output-side negative power supply with a good quality bypass capacitor required from this pin to GND2 placed close to the pin; VEE2-GND2 is rated from -18 V to 0.3 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-8 |
| Category | Power Management ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage, Input Side (VDD1-GND1) | VDD1−GND1 | -0.3 | 22 | V | 6 | ||
| Positive Power Supply, Output Side (VDD2-GND2) | VDD2−GND2 | -0.3 | 32 | V | 6 | ||
| Negative Power Supply, Output Side (VEE2-GND2) | VEE2−GND2 | -18 | 0.3 | V | 6 | ||
| Differential Power Supply, Output Side (VMAX2), NCx5708zB | VDD2−VEE2 (VMAX2) | 0 | 36 | V | NCx5708zB | 6 | |
| Gate-driver Output Low Voltage, NCx5708zA/B | VOUT−GND2 | -0.3 | V | NCx5708zA/B | 6 | ||
| Voltage at IN+, IN− | VLIM−GND1 | -0.3 | V | 6 | |||
| Gate-driver Output Sourcing Current | IPK−SRC | 6.5 | A | maximum pulse width = 10 µs, maximum duty cycle = 0.2%, VDD2 = 15 V, VEE2 = 0 V | 6 | ||
| Gate-driver Output Sinking Current | IPK−SNK | 6.5 | A | maximum pulse width = 10 µs, maximum duty cycle = 0.2%, VDD2 = 15 V, VEE2 = 0 V | 6 | ||
| Power Dissipation (SOIC-8 Narrow Package) | PD | 1315 | mW | 6 | |||
| Maximum Junction Temperature | TJ(max) | -40 | 150 | °C | 7 | ||
| Storage Temperature Range | TSTG | -65 | 150 | °C | 7 | ||
| ESD Capability, Human Body Model | ESDHBM | -2 | 2 | kV | AEC-Q100-002 (EIA/JESD22-A114) | 7 | |
| Supply Voltage, Input Side (operating range) | VDD1−GND1 | 20 | V | 7 | |||
| Positive Power Supply, Output Side (operating range) | VDD2−GND2 | 30 | V | 7 | |||
| Negative Power Supply, Output Side (operating range), NCx5708zB | VEE2−GND2 | -15 | 0 | V | NCx5708zB | 7 | |
| Differential Power Supply, Output Side (VMAX2) operating range, NCx5708zB | VDD2−VEE2 (VMAX2) | 0 | 32 | V | NCx5708zB | 7 | |
| Low Level Input Voltage at IN+, IN− | VIL | 0 | V | 7 | |||
| Common Mode Transient Immunity | /dVISO/dt/ | 100 | kV/s | Note 8: tested by ±1500 V pulses up to 100 kV/s | 7 | ||
| Ambient Temperature | TA | -40 | 125 | °C | 7 | ||
| UVLO1 Output Enabled | VUVLO1−OUT−ON | 3.1 | V | UVLO1 Output Enabled | 8 | ||
| UVLO1 Output Disabled | VUVLO1−OUT−OFF | 2.4 | V | UVLO1 Output Disabled | 8 | ||
| UVLO1 Hysteresis | VUVLO1−HYST | 0.1 | V | 8 | |||
| UVLO2 Output Enabled, NCx57080y | VUVLO2−OUT−ON | 12.4 | 12.9 | 13.4 | V | NCx57080y | 8 |
| UVLO2 Output Disabled, NCx57080y | VUVLO2−OUT−OFF | 11.5 | 12 | 12.5 | V | NCx57080y | 8 |
| UVLO2 Hysteresis | VUVLO2−HYST | 0.7 | 1 | V | 8 | ||
| Input Supply Quiescent Current (VDD1 = 3.3 V) | IDD1−0−3.3 | 2 | mA | IN+ = Low, IN− = Low, VDD1 = 3.3 V | 8 | ||
| Input Supply Quiescent Current (VDD1 = 5 V) | IDD1−0−5 | 2 | mA | IN+ = Low, IN− = Low | 8 | ||
| Input Supply Quiescent Current (VDD1 = 15 V) | IDD1−0−15 | 2 | mA | IN+ = Low, IN− = Low, VDD1 = 15 V | 8 | ||
| Input Supply Current, IN+ High | IDD1−100−5 | 5.5 | mA | IN+ = High, IN− = Low | 8 | ||
| Output Positive Supply Quiescent Current | IDD2−0 | 2 | mA | IN+ = Low, IN− = Low, no load | 8 | ||
| Output Positive Supply Current, IN+ High | IDD2−100 | 2 | mA | IN+ = High, IN− = Low, no load | 8 | ||
| Output Negative Supply Quiescent Current (NCx5708zB) | IEE2−0 | 2 | mA | IN+ = Low, IN− = Low, no load, VEE2 = −8 V | 8 | ||
| Output Negative Supply Current, IN+ High (NCx5708zB) | IEE2−100 | 2 | mA | IN+ = High, IN− = Low, no load, VEE2 = −8 V | 8 | ||
| IN− Input Current (VDD1 = 3.3 V) | IIN−L−3.3 | 100 | µA | VIN− = 0 V, VDD1 = 3.3 V | 8 | ||
| IN− Input Current (VDD1 = 5 V) | IIN−L−5 | 100 | µA | VIN− = 0 V | 8 | ||
| IN− Input Current (VDD1 = 15 V) | IIN−L−15 | 100 | µA | VIN− = 0 V, VDD1 = 15 V | 8 | ||
| IN− Input Current (VDD1 = 20 V) | IIN−L−20 | 100 | µA | VIN− = 0 V, VDD1 = 20 V | 8 | ||
| IN+ Input Current (VDD1 = 3.3 V) | IIN+H−3.3 | 100 | µA | VIN+ = VDD1 = 3.3 V | 8 | ||
| IN+ Input Current (VDD1 = 5 V) | IIN+H−5 | 100 | µA | VIN+ = VDD1 = 5 V | 8 | ||
| IN+ Input Current (VDD1 = 15 V) | IIN+H−15 | 100 | µA | VIN+ = VDD1 = 15 V | 8 | ||
| IN+ Input Current (VDD1 = 20 V) | IIN+H−20 | 100 | µA | VIN+ = VDD1 = 20 V | 8 | ||
| Input Pulse Width for Guaranteed No Response at Output | tON−MIN1 | 10 | ns | 8 | |||
| Input Pulse Width for Guaranteed Response at Output | tON−MIN2 | 40 | ns | 8 | |||
| Output Low State | VOUTL1 | 0.15 | 0.3 | V | ISINK = 200 mA | 9 | |
| Output Low State (high sink current) | VOUTL2 | 0.8 | V | ISINK = 1.0 A, TA = 25°C (Note 12) | 9 | ||
| Output High State | VOUTH1 | 0.2 | 0.35 | V | ISRC = 200 mA | 9 | |
| Output High State (high source current) | VOUTH2 | 1 | V | ISRC = 1.0 A, TA = 25°C (Note 12) | 9 | ||
| Clamping Voltage, Sourcing (VOUT / VOUTH − VDD2) | VCLAMP−OUTH | 0.7 | 1.3 | V | IN+ = Low, IN− = High, ICLAMP−OUT/OUTH = 500 mA, (pulse test, tCLPmax = 10 µs) | 9 | |
| Clamping Voltage, Sinking (VOUTL − VDD2) | VCLAMP−OUTL | 0.8 | 1.5 | V | IN+ = High, IN− = Low, ICLAMP−OUTL = 500 mA, (pulse test, tCLPmax = 10 µs) | 9 | |
| Propagation Delay IN+, IN− to Output High (3.3 V) | tPD−ON−3.3 | 40 | 60 | 90 | ns | VDD1 = VIN+ = 3.3V, VIN− = 0 V | 9 |
| Propagation Delay IN+, IN− to Output High (5 V) | tPD−ON−5 | 40 | 60 | 90 | ns | VDD1 = VIN+ = 5 V, VIN− = 0 V | 9 |
| Propagation Delay IN+, IN− to Output High (15 V) | tPD−ON−15 | 40 | 60 | 90 | ns | VDD1 = VIN+ = 15 V, VIN− = 0 V | 9 |
| Propagation Delay IN+, IN− to Output High (20 V) | tPD−ON−20 | 40 | 60 | 90 | ns | VDD1 = VIN+ = 20 V, VIN− = 0 V | 9 |
| Propagation Delay IN+, IN− to Output Low (3.3 V) | tPD−OFF−3.3 | 40 | 60 | 90 | ns | VDD1 = VIN+ = 3.3 V, VIN− = 0 V | 9 |
| Propagation Delay IN+, IN− to Output Low (5 V) | tPD−OFF−5 | 40 | 60 | 90 | ns | VDD1 = VIN+ = 5 V, VIN− = 0 V | 9 |
| Propagation Delay IN+, IN− to Output Low (15 V) | tPD−OFF−15 | 40 | 60 | 90 | ns | VDD1 = VIN+ = 15 V, VIN− = 0 V | 9 |
| Propagation Delay IN+, IN− to Output Low (20 V) | tPD−OFF−20 | 40 | 60 | 90 | ns | VDD1 = VIN+ = 20 V, VIN− = 0 V | 9 |
| Propagation Delay Distortion (TA = −40 °C to 125 °C) | tDISTORT | -25 | 25 | ns | TA = −40°C to 125°C, PW > 150 ns | 9 | |
| Prop Delay Distortion between Parts | tDISTORT_TOT | -30 | 0 | 30 | ns | PW > 150 ns | 9 |
| Thermal Resistance, Junction-to-Air, SOIC-8 narrow body | RJA | 95 | °C/W | 4-Layer (Note 5: 100 mm² copper, 1 oz, FR4 PCB) | 7 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | ABS | RIO Insulation Resistance at TS, VIO = 500 V 109 Table 3. ABSOLUTE MAXIMUM RATINGS (Note 1) | 6 |
CAD (KiCad official)
- Symbol:
NCD57080BDR2G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ncd57080bdr2g-etched.step/ncd57080bdr2g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncd57080bdr2g.step/ncd57080bdr2g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (24 pp, sha256
748b3eca1fc6dfa7, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).