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MTC4501Q8-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MTC4501Q8-VB

VBsemi Elec · MOSFETs · SO-8

MTC4501Q8-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30 V VDS, ±20 V VGS).
2 G1 passive Gate of the N-channel MOSFET (±20 V maximum VGS).
3 S2 passive Source of the P-channel MOSFET (-30 V VDS, ±20 V VGS).
4 G2 passive Gate of the P-channel MOSFET (±20 V maximum VGS).
5 D2 passive Drain of the P-channel MOSFET, tied internally with pin 6 (-30 V VDS).
6 D2 passive Drain of the P-channel MOSFET, tied internally with pin 5 (-30 V VDS).
7 D1 passive Drain of the N-channel MOSFET, tied internally with pin 8 (30 V VDS).
8 D1 passive Drain of the N-channel MOSFET, tied internally with pin 7 (30 V VDS).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage VDS 30 V TA = 25 °C 1
P-ch Drain-Source Voltage VDS -30 V TA = 25 °C 1
N-ch Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
P-ch Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
N-ch Continuous Drain Current ID 8 A TC = 25 °C, TJ = 150 °C, package limited 1
P-ch Continuous Drain Current ID -8 A TC = 25 °C, TJ = 150 °C, package limited 1
N-ch Continuous Drain Current ID 6.8 A TC = 70 °C 1
P-ch Continuous Drain Current ID -6.8 A TC = 70 °C 1
P-ch Continuous Drain Current ID -6.6 A TA = 25 °C, b, c 1
N-ch Continuous Drain Current ID 5.4 A TA = 70 °C, b, c 1
P-ch Continuous Drain Current ID -5.3 A TA = 70 °C, b, c 1
N-ch Pulsed Drain Current IDM 40 A 10 µs pulse width 1
P-ch Pulsed Drain Current IDM -40 A 10 µs pulse width 1
N-ch Source-Drain Diode Current IS 2.6 A TC = 25 °C 1
P-ch Source-Drain Diode Current IS -2.6 A TC = 25 °C 1
N-ch Single Pulse Avalanche Current IAS 10 A L = 0.1 mH 1
P-ch Single Pulse Avalanche Current IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 520 mJ L = 0.1 mH 1
N-ch Maximum Power Dissipation PD 2 W TA = 25 °C, b, c 1
P-ch Maximum Power Dissipation PD 2 W TA = 25 °C, b, c 1
N-ch Maximum Power Dissipation PD 1.28 W TA = 70 °C, b, c 1
P-ch Maximum Power Dissipation PD 1.28 W TA = 70 °C, b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
N-ch Junction-to-Ambient Thermal Resistance RthJA 50 62.5 °C/W t ≤ 10 s, b, d 1
P-ch Junction-to-Ambient Thermal Resistance RthJA 47 62.5 °C/W t ≤ 10 s, b, d 1
N-ch Junction-to-Foot (Drain) Thermal Resistance RthJF 30 40 °C/W Steady State 1
P-ch Junction-to-Foot (Drain) Thermal Resistance RthJF 29 38 °C/W Steady State 1
P-ch Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
N-ch Gate Threshold Voltage VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
P-ch Gate Threshold Voltage VGS(th) -1 -2 V VDS = VGS, ID = - 250 µA 2
N-ch Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
P-ch Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
N-ch Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
P-ch Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
N-ch Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
P-ch Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
N-ch On-State Drain Current ID(on) 20 A VDS = 5 V, VGS = 10 V 2
P-ch On-State Drain Current ID(on) -20 A VDS = - 5 V, VGS = - 10 V 2
P-ch Drain-Source On-State Resistance RDS(on) 0.04 Ω VGS = - 10 V, ID = - 8 A 2
N-ch Drain-Source On-State Resistance RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A 2
P-ch Drain-Source On-State Resistance RDS(on) 0.044 Ω VGS = - 8 V, ID = - 6.5 A 2
N-ch Drain-Source On-State Resistance RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A 2
P-ch Drain-Source On-State Resistance RDS(on) 0.05 Ω VGS = - 4.5 V, ID = - 5 A 2
N-ch Gate Resistance Rg 1 2.3 Ω f = 1 MHz 2
P-ch Gate Resistance Rg 1.2 5.7 9.6 Ω f = 1 MHz 2
P-ch Total Gate Charge Qg 41.5 63 nC VDS = - 20 V, VGS = - 10 V, ID = - 10 A 2
N-ch Turn-On Delay Time td(on) 4 8 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
P-ch Turn-On Delay Time td(on) 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
N-ch Rise Time tr 10 17 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
P-ch Rise Time tr 9 15 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
N-ch Fall Time tf 5 9 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
P-ch Fall Time tf 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
N-ch Body Diode Voltage VSD 0.81 1.2 V IS = 5.4 A 3
P-ch Body Diode Voltage VSD -0.77 -1.2 V IS = - 2 A 3
P-ch Body Diode Reverse Recovery Time trr 31 57 ns IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C 3
P-ch Body Diode Reverse Recovery Charge Qrr 29 47 nC IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C 3

CAD (KiCad official)

  • Symbol: MTC4501Q8-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: mtc4501q8-vb-etched.step / mtc4501q8-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mtc4501q8-vb.step / mtc4501q8-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 34363abcd3692700, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF