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MTC4501Q8-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMTC4501Q8-VB
VBsemi Elec · MOSFETs · SO-8
MTC4501Q8-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30 V VDS, ±20 V VGS). |
| 2 | G1 | passive | Gate of the N-channel MOSFET (±20 V maximum VGS). |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30 V VDS, ±20 V VGS). |
| 4 | G2 | passive | Gate of the P-channel MOSFET (±20 V maximum VGS). |
| 5 | D2 | passive | Drain of the P-channel MOSFET, tied internally with pin 6 (-30 V VDS). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, tied internally with pin 5 (-30 V VDS). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, tied internally with pin 8 (30 V VDS). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, tied internally with pin 7 (30 V VDS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 30 | V | TA = 25 °C | 1 | ||
| P-ch Drain-Source Voltage | VDS | -30 | V | TA = 25 °C | 1 | ||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| N-ch Continuous Drain Current | ID | 8 | A | TC = 25 °C, TJ = 150 °C, package limited | 1 | ||
| P-ch Continuous Drain Current | ID | -8 | A | TC = 25 °C, TJ = 150 °C, package limited | 1 | ||
| N-ch Continuous Drain Current | ID | 6.8 | A | TC = 70 °C | 1 | ||
| P-ch Continuous Drain Current | ID | -6.8 | A | TC = 70 °C | 1 | ||
| P-ch Continuous Drain Current | ID | -6.6 | A | TA = 25 °C, b, c | 1 | ||
| N-ch Continuous Drain Current | ID | 5.4 | A | TA = 70 °C, b, c | 1 | ||
| P-ch Continuous Drain Current | ID | -5.3 | A | TA = 70 °C, b, c | 1 | ||
| N-ch Pulsed Drain Current | IDM | 40 | A | 10 µs pulse width | 1 | ||
| P-ch Pulsed Drain Current | IDM | -40 | A | 10 µs pulse width | 1 | ||
| N-ch Source-Drain Diode Current | IS | 2.6 | A | TC = 25 °C | 1 | ||
| P-ch Source-Drain Diode Current | IS | -2.6 | A | TC = 25 °C | 1 | ||
| N-ch Single Pulse Avalanche Current | IAS | 10 | A | L = 0.1 mH | 1 | ||
| P-ch Single Pulse Avalanche Current | IAS | 20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 520 | mJ | L = 0.1 mH | 1 | ||
| N-ch Maximum Power Dissipation | PD | 2 | W | TA = 25 °C, b, c | 1 | ||
| P-ch Maximum Power Dissipation | PD | 2 | W | TA = 25 °C, b, c | 1 | ||
| N-ch Maximum Power Dissipation | PD | 1.28 | W | TA = 70 °C, b, c | 1 | ||
| P-ch Maximum Power Dissipation | PD | 1.28 | W | TA = 70 °C, b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| N-ch Junction-to-Ambient Thermal Resistance | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s, b, d | 1 | |
| P-ch Junction-to-Ambient Thermal Resistance | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s, b, d | 1 | |
| N-ch Junction-to-Foot (Drain) Thermal Resistance | RthJF | 30 | 40 | °C/W | Steady State | 1 | |
| P-ch Junction-to-Foot (Drain) Thermal Resistance | RthJF | 29 | 38 | °C/W | Steady State | 1 | |
| P-ch Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -2 | V | VDS = VGS, ID = - 250 µA | 2 | |
| N-ch Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| P-ch Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| N-ch On-State Drain Current | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| P-ch On-State Drain Current | ID(on) | -20 | A | VDS = - 5 V, VGS = - 10 V | 2 | ||
| P-ch Drain-Source On-State Resistance | RDS(on) | 0.04 | Ω | VGS = - 10 V, ID = - 8 A | 2 | ||
| N-ch Drain-Source On-State Resistance | RDS(on) | 0.02 | Ω | VGS = 8 V, ID = 6.7 A | 2 | ||
| P-ch Drain-Source On-State Resistance | RDS(on) | 0.044 | Ω | VGS = - 8 V, ID = - 6.5 A | 2 | ||
| N-ch Drain-Source On-State Resistance | RDS(on) | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 | ||
| P-ch Drain-Source On-State Resistance | RDS(on) | 0.05 | Ω | VGS = - 4.5 V, ID = - 5 A | 2 | ||
| N-ch Gate Resistance | Rg | 1 | 2.3 | Ω | f = 1 MHz | 2 | |
| P-ch Gate Resistance | Rg | 1.2 | 5.7 | 9.6 | Ω | f = 1 MHz | 2 |
| P-ch Total Gate Charge | Qg | 41.5 | 63 | nC | VDS = - 20 V, VGS = - 10 V, ID = - 10 A | 2 | |
| N-ch Turn-On Delay Time | td(on) | 4 | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| P-ch Turn-On Delay Time | td(on) | 10 | 16 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 3 | |
| N-ch Rise Time | tr | 10 | 17 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| P-ch Rise Time | tr | 9 | 15 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 3 | |
| N-ch Fall Time | tf | 5 | 9 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| P-ch Fall Time | tf | 10 | 16 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 3 | |
| N-ch Body Diode Voltage | VSD | 0.81 | 1.2 | V | IS = 5.4 A | 3 | |
| P-ch Body Diode Voltage | VSD | -0.77 | -1.2 | V | IS = - 2 A | 3 | |
| P-ch Body Diode Reverse Recovery Time | trr | 31 | 57 | ns | IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C | 3 | |
| P-ch Body Diode Reverse Recovery Charge | Qrr | 29 | 47 | nC | IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
MTC4501Q8-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
mtc4501q8-vb-etched.step/mtc4501q8-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mtc4501q8-vb.step/mtc4501q8-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
34363abcd3692700, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).