component
MSUSBLC6-2SC6
Public Made by Adomby adom
MSKSEMI ESD And Surge Protection (TVS/ESD), SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MSUSBLC6-2SC6
MSKSEMI · ESD And Surge Protection (TVS/ESD) · SOT-23-6
MSUSBLC6-2SC6 from MSKSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O1 | passive | ESD-protected high-speed I/O channel 1, internally tied to pin 6 in the graphic symbol, with 0.8pF typ I/O-to-GND capacitance and 5.0V max reverse working voltage. |
| 2 | GND | power_in | Ground reference for the ESD protection diodes. |
| 3 | I/O2 | passive | ESD-protected high-speed I/O channel 2, internally tied to pin 4 in the graphic symbol, with 0.8pF typ I/O-to-GND capacitance and 5.0V max reverse working voltage. |
| 4 | I/O2 | passive | ESD-protected high-speed I/O channel 2, internally tied to pin 3 in the graphic symbol, with IEC 61000-4-2 protection of ±30kV air and contact. |
| 5 | VBUS | power_in | Supply/VBUS rail connection of the diode array (labelled VDD in the electrical table), with clamping voltage of 11.0V typ, 13.0V max at IPP=8A, 8/20μs. |
| 6 | I/O1 | passive | ESD-protected high-speed I/O channel 1, internally tied to pin 1 in the graphic symbol, with IEC 61000-4-2 protection of ±30kV air and contact. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23-6 |
| Category | Circuit Protection |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | 5 | V | 3 | |||
| Breakdown Voltage | VBR | 6.5 | 9 | V | IT=1mA | 3 | |
| Leakage Current | ILeak | 100 | nA | VRWM=5V | 3 | ||
| Clamping Voltage (I/O-GND) | VC | 11 | 13 | V | IPP=6A, Tp=8/20μs | 3 | |
| Clamping Voltage (VDD-GND) | VC | 11 | 13 | V | IPP=8A, Tp=8/20μs | 3 | |
| Junction Capacitance (I/O to I/O) | Cj | 0.4 | 0.5 | pF | VR=0V, f=1MHz | 3 | |
| Junction Capacitance (I/O to GND) | Cj | 0.8 | 1 | pF | VR=0V, f=1MHz | 3 | |
| Peak Pulse Power | PPPM | 78 | W | Tp = 8/20μs | 3 | ||
| Rated Peak Pulse Current | IPPM | 6 | A | Tp = 8/20μs | 3 | ||
| ESD voltage IEC 61000-4-2 (air discharge) | VESD | 30 | kV | IEC 61000-4-2 air discharge | 3 | ||
| ESD voltage IEC 61000-4-2 (contact discharge) | VESD | 30 | kV | IEC 61000-4-2 contact discharge | 3 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 3 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 3 | ||
| Operating Temperature Range | TOP | -40 | 125 | °C | 3 |
CAD (KiCad official)
- Symbol:
MSUSBLC6-2SC6 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
msusblc6-2sc6-etched.step/msusblc6-2sc6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msusblc6-2sc6.step/msusblc6-2sc6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
2c2515b1259fd301, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MSUSBLC6-2SC6
**MSKSEMI** · ESD And Surge Protection (TVS/ESD) · SOT-23-6
MSUSBLC6-2SC6 from MSKSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O1 | passive | ESD-protected high-speed I/O channel 1, internally tied to pin 6 in the graphic symbol, with 0.8pF typ I/O-to-GND capacitance and 5.0V max reverse working voltage. |
| 2 | GND | power_in | Ground reference for the ESD protection diodes. |
| 3 | I/O2 | passive | ESD-protected high-speed I/O channel 2, internally tied to pin 4 in the graphic symbol, with 0.8pF typ I/O-to-GND capacitance and 5.0V max reverse working voltage. |
| 4 | I/O2 | passive | ESD-protected high-speed I/O channel 2, internally tied to pin 3 in the graphic symbol, with IEC 61000-4-2 protection of ±30kV air and contact. |
| 5 | VBUS | power_in | Supply/VBUS rail connection of the diode array (labelled VDD in the electrical table), with clamping voltage of 11.0V typ, 13.0V max at IPP=8A, 8/20μs. |
| 6 | I/O1 | passive | ESD-protected high-speed I/O channel 1, internally tied to pin 1 in the graphic symbol, with IEC 61000-4-2 protection of ±30kV air and contact. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23-6 |
| Category | Circuit Protection |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | | | 5 | V | | 3 |
| Breakdown Voltage | VBR | 6.5 | | 9 | V | IT=1mA | 3 |
| Leakage Current | ILeak | | | 100 | nA | VRWM=5V | 3 |
| Clamping Voltage (I/O-GND) | VC | | 11 | 13 | V | IPP=6A, Tp=8/20μs | 3 |
| Clamping Voltage (VDD-GND) | VC | | 11 | 13 | V | IPP=8A, Tp=8/20μs | 3 |
| Junction Capacitance (I/O to I/O) | Cj | | 0.4 | 0.5 | pF | VR=0V, f=1MHz | 3 |
| Junction Capacitance (I/O to GND) | Cj | | 0.8 | 1 | pF | VR=0V, f=1MHz | 3 |
| Peak Pulse Power | PPPM | | | 78 | W | Tp = 8/20μs | 3 |
| Rated Peak Pulse Current | IPPM | | | 6 | A | Tp = 8/20μs | 3 |
| ESD voltage IEC 61000-4-2 (air discharge) | VESD | | | 30 | kV | IEC 61000-4-2 air discharge | 3 |
| ESD voltage IEC 61000-4-2 (contact discharge) | VESD | | | 30 | kV | IEC 61000-4-2 contact discharge | 3 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 3 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 3 |
| Operating Temperature Range | TOP | -40 | | 125 | °C | | 3 |
## CAD (KiCad official)
- Symbol: `MSUSBLC6-2SC6`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `msusblc6-2sc6-etched.step` / `msusblc6-2sc6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `msusblc6-2sc6.step` / `msusblc6-2sc6.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756582831638089728) (6 pp, sha256 `2c2515b1259fd301`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/msusblc6-2sc6-datasheet.pdf)