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MSUSBLC6-2SC6

MSKSEMI · ESD And Surge Protection (TVS/ESD) · SOT-23-6

MSUSBLC6-2SC6 from MSKSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O1 passive ESD-protected high-speed I/O channel 1, internally tied to pin 6 in the graphic symbol, with 0.8pF typ I/O-to-GND capacitance and 5.0V max reverse working voltage.
2 GND power_in Ground reference for the ESD protection diodes.
3 I/O2 passive ESD-protected high-speed I/O channel 2, internally tied to pin 4 in the graphic symbol, with 0.8pF typ I/O-to-GND capacitance and 5.0V max reverse working voltage.
4 I/O2 passive ESD-protected high-speed I/O channel 2, internally tied to pin 3 in the graphic symbol, with IEC 61000-4-2 protection of ±30kV air and contact.
5 VBUS power_in Supply/VBUS rail connection of the diode array (labelled VDD in the electrical table), with clamping voltage of 11.0V typ, 13.0V max at IPP=8A, 8/20μs.
6 I/O1 passive ESD-protected high-speed I/O channel 1, internally tied to pin 1 in the graphic symbol, with IEC 61000-4-2 protection of ±30kV air and contact.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23-6
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Working Voltage VRWM 5 V 3
Breakdown Voltage VBR 6.5 9 V IT=1mA 3
Leakage Current ILeak 100 nA VRWM=5V 3
Clamping Voltage (I/O-GND) VC 11 13 V IPP=6A, Tp=8/20μs 3
Clamping Voltage (VDD-GND) VC 11 13 V IPP=8A, Tp=8/20μs 3
Junction Capacitance (I/O to I/O) Cj 0.4 0.5 pF VR=0V, f=1MHz 3
Junction Capacitance (I/O to GND) Cj 0.8 1 pF VR=0V, f=1MHz 3
Peak Pulse Power PPPM 78 W Tp = 8/20μs 3
Rated Peak Pulse Current IPPM 6 A Tp = 8/20μs 3
ESD voltage IEC 61000-4-2 (air discharge) VESD 30 kV IEC 61000-4-2 air discharge 3
ESD voltage IEC 61000-4-2 (contact discharge) VESD 30 kV IEC 61000-4-2 contact discharge 3
Maximum lead temperature for soldering TL 260 °C during 10s 3
Storage Temperature Range Tstg -55 150 °C 3
Operating Temperature Range TOP -40 125 °C 3

CAD (KiCad official)

  • Symbol: MSUSBLC6-2SC6
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: msusblc6-2sc6-etched.step / msusblc6-2sc6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); msusblc6-2sc6.step / msusblc6-2sc6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 2c2515b1259fd301, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF