component
MST1018
Public Made by Adomby adom
MST DC-DC Converters, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MST1018
MST · DC-DC Converters · TO-252
MST1018 from MST, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is limited to ±20V, with a typical threshold of 1.9V (1.2V min, 2.5V max at 250µA). |
| 2 | D | passive | Drain, also the exposed tab; drain-to-source voltage is rated 100V and continuous current is 40A at TC = 25°C. |
| 3 | S | passive | Source; the body diode runs from source to drain with a 1.0V maximum forward voltage at 1A, and its continuous current is 52A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MST |
| Package | TO-252 |
| Category | Power Management (PMIC) |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 100 | V | TA = 25 °C | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 40 | A | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 25 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 116 | A | 1 | |||
| Avalanche Current | IAS | 22 | A | L = 100μH, VGS = 10V, VDS = 50V | 1 | ||
| Avalanche Energy | EAS | 24 | mJ | L = 100μH, VGS = 10V, VDS = 50V | 1 | ||
| Power Dissipation | PD | 52 | W | TC = 25°C | 1 | ||
| Power Dissipation | PD | 21 | W | TC = 100°C | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | ID = 250μA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 80V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | TJ = 55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.9 | 2.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | 14 | 17 | mΩ | VGS = 10V, ID = 10A | 2 | |
| Static Drain-Source ON-Resistance | RDS(ON) | 18.5 | 23 | mΩ | VGS = 4.5V, ID = 6A | 2 | |
| Forward Transconductance | gFS | 48 | S | VDS = 5V, ID = 20A | 2 | ||
| Diode Forward Voltage | VSD | 0.7 | 1 | V | IS = 1A, VGS = 0V | 2 | |
| Diode Continuous Current | IS | 52 | A | TC = 25°C | 2 | ||
| Input Capacitance | Ciss | 769 | pF | VGS = 0V, VDS = 50V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 171 | pF | VGS = 0V, VDS = 50V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5.1 | pF | VGS = 0V, VDS = 50V, f = 1MHz | 2 | ||
| Gate Resistance | Rg | 1.9 | Ω | VGS = 0V, VDS= 0V, f = 1MHz | 2 | ||
| Total Gate Charge (@ VGS = 10V) | Qg | 12.7 | nC | VGS = 0 to 10V, VDS = 50V, ID = 10A | 2 | ||
| Total Gate Charge (@ VGS = 6.0V) | Qg | 6.7 | nC | VDS = 50V, ID = 10A | 2 | ||
| Gate Source Charge | Qgs | 2.1 | nC | VDS = 50V, ID = 10A | 2 | ||
| Gate Drain Charge | Qgd | 3.3 | nC | VDS = 50V, ID = 10A | 2 | ||
| Turn-On Delay Time | tD(on) | 4.3 | ns | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω | 2 | ||
| Turn-On Rise Time | tr | 5.1 | ns | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 16.7 | ns | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω | 2 | ||
| Turn-Off Fall Time | tf | 8.7 | ns | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 39 | ns | IF = 15A, dIF/dt = 100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 30 | nC | IF = 15A, dIF/dt = 100A/μs | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 42 | 50 | °C/W | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.8 | 2.4 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
MST1018 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mst1018-etched.step/mst1018-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mst1018.step/mst1018.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MST datasheet (6 pp, sha256
345dad74e754f737, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MST1018
**MST** · DC-DC Converters · TO-252
MST1018 from MST, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is limited to ±20V, with a typical threshold of 1.9V (1.2V min, 2.5V max at 250µA). |
| 2 | D | passive | Drain, also the exposed tab; drain-to-source voltage is rated 100V and continuous current is 40A at TC = 25°C. |
| 3 | S | passive | Source; the body diode runs from source to drain with a 1.0V maximum forward voltage at 1A, and its continuous current is 52A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MST |
| Package | TO-252 |
| Category | Power Management (PMIC) |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | 100 | V | TA = 25 °C | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current | ID | | | 40 | A | TC = 25°C | 1 |
| Continuous Drain Current | ID | | | 25 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 116 | A | | 1 |
| Avalanche Current | IAS | | | 22 | A | L = 100μH, VGS = 10V, VDS = 50V | 1 |
| Avalanche Energy | EAS | | | 24 | mJ | L = 100μH, VGS = 10V, VDS = 50V | 1 |
| Power Dissipation | PD | | | 52 | W | TC = 25°C | 1 |
| Power Dissipation | PD | | | 21 | W | TC = 100°C | 1 |
| Junction & Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | ID = 250μA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 80V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | μA | TJ = 55°C | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.9 | 2.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | | 14 | 17 | mΩ | VGS = 10V, ID = 10A | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | | 18.5 | 23 | mΩ | VGS = 4.5V, ID = 6A | 2 |
| Forward Transconductance | gFS | | 48 | | S | VDS = 5V, ID = 20A | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1 | V | IS = 1A, VGS = 0V | 2 |
| Diode Continuous Current | IS | | | 52 | A | TC = 25°C | 2 |
| Input Capacitance | Ciss | | 769 | | pF | VGS = 0V, VDS = 50V, f = 1MHz | 2 |
| Output Capacitance | Coss | | 171 | | pF | VGS = 0V, VDS = 50V, f = 1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 5.1 | | pF | VGS = 0V, VDS = 50V, f = 1MHz | 2 |
| Gate Resistance | Rg | | 1.9 | | Ω | VGS = 0V, VDS= 0V, f = 1MHz | 2 |
| Total Gate Charge (@ VGS = 10V) | Qg | | 12.7 | | nC | VGS = 0 to 10V, VDS = 50V, ID = 10A | 2 |
| Total Gate Charge (@ VGS = 6.0V) | Qg | | 6.7 | | nC | VDS = 50V, ID = 10A | 2 |
| Gate Source Charge | Qgs | | 2.1 | | nC | VDS = 50V, ID = 10A | 2 |
| Gate Drain Charge | Qgd | | 3.3 | | nC | VDS = 50V, ID = 10A | 2 |
| Turn-On Delay Time | tD(on) | | 4.3 | | ns | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω | 2 |
| Turn-On Rise Time | tr | | 5.1 | | ns | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω | 2 |
| Turn-Off Delay Time | tD(off) | | 16.7 | | ns | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω | 2 |
| Turn-Off Fall Time | tf | | 8.7 | | ns | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω | 2 |
| Body Diode Reverse Recovery Time | trr | | 39 | | ns | IF = 15A, dIF/dt = 100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 30 | | nC | IF = 15A, dIF/dt = 100A/μs | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 42 | 50 | °C/W | | 2 |
| Thermal Resistance, Junction-to-Case | RθJC | | 1.8 | 2.4 | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `MST1018`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mst1018-etched.step` / `mst1018-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mst1018.step` / `mst1018.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MST datasheet](docs/mst1018-datasheet.pdf) (6 pp, sha256 `345dad74e754f737`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mst1018-datasheet.pdf)