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MST1018

MST · DC-DC Converters · TO-252

MST1018 from MST, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is limited to ±20V, with a typical threshold of 1.9V (1.2V min, 2.5V max at 250µA).
2 D passive Drain, also the exposed tab; drain-to-source voltage is rated 100V and continuous current is 40A at TC = 25°C.
3 S passive Source; the body diode runs from source to drain with a 1.0V maximum forward voltage at 1A, and its continuous current is 52A.

Key specifications

Parameter Value
Manufacturer MST
Package TO-252
Category Power Management (PMIC)
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 100 V TA = 25 °C 1
Gate-to-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 40 A TC = 25°C 1
Continuous Drain Current ID 25 A TC = 100°C 1
Pulsed Drain Current IDM 116 A 1
Avalanche Current IAS 22 A L = 100μH, VGS = 10V, VDS = 50V 1
Avalanche Energy EAS 24 mJ L = 100μH, VGS = 10V, VDS = 50V 1
Power Dissipation PD 52 W TC = 25°C 1
Power Dissipation PD 21 W TC = 100°C 1
Junction & Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V ID = 250μA, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 80V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 5 μA TJ = 55°C 2
Gate-Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) 1.2 1.9 2.5 V VDS = VGS, ID = 250μA 2
Static Drain-Source ON-Resistance RDS(ON) 14 17 mΩ VGS = 10V, ID = 10A 2
Static Drain-Source ON-Resistance RDS(ON) 18.5 23 mΩ VGS = 4.5V, ID = 6A 2
Forward Transconductance gFS 48 S VDS = 5V, ID = 20A 2
Diode Forward Voltage VSD 0.7 1 V IS = 1A, VGS = 0V 2
Diode Continuous Current IS 52 A TC = 25°C 2
Input Capacitance Ciss 769 pF VGS = 0V, VDS = 50V, f = 1MHz 2
Output Capacitance Coss 171 pF VGS = 0V, VDS = 50V, f = 1MHz 2
Reverse Transfer Capacitance Crss 5.1 pF VGS = 0V, VDS = 50V, f = 1MHz 2
Gate Resistance Rg 1.9 Ω VGS = 0V, VDS= 0V, f = 1MHz 2
Total Gate Charge (@ VGS = 10V) Qg 12.7 nC VGS = 0 to 10V, VDS = 50V, ID = 10A 2
Total Gate Charge (@ VGS = 6.0V) Qg 6.7 nC VDS = 50V, ID = 10A 2
Gate Source Charge Qgs 2.1 nC VDS = 50V, ID = 10A 2
Gate Drain Charge Qgd 3.3 nC VDS = 50V, ID = 10A 2
Turn-On Delay Time tD(on) 4.3 ns VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω 2
Turn-On Rise Time tr 5.1 ns VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω 2
Turn-Off Delay Time tD(off) 16.7 ns VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω 2
Turn-Off Fall Time tf 8.7 ns VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 6Ω 2
Body Diode Reverse Recovery Time trr 39 ns IF = 15A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 30 nC IF = 15A, dIF/dt = 100A/μs 2
Thermal Resistance, Junction-to-Ambient RθJA 42 50 °C/W 2
Thermal Resistance, Junction-to-Case RθJC 1.8 2.4 °C/W 2

CAD (KiCad official)

  • Symbol: MST1018
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mst1018-etched.step / mst1018-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mst1018.step / mst1018.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MST datasheet (6 pp, sha256 345dad74e754f737, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF