# MSQ60P04D

**Bruckewell** · MOSFETs · SOP-8

MSQ60P04D from Bruckewell, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; body diode anode, with VDS rated -60 V and continuous source current -3.7 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage limited to ±20 V with threshold of -1.2 V to -2.5 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; body diode anode, with VDS rated -60 V and continuous source current -3.7 A. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage limited to ±20 V with threshold of -1.2 V to -2.5 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; drain-source voltage -60 V max and continuous drain current -3.7 A at TA=25°C (pins 5 and 6 are both D2). |
| 6 | D2 | passive | Drain of P-channel MOSFET 2; drain-source voltage -60 V max and continuous drain current -3.7 A at TA=25°C (pins 5 and 6 are both D2). |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; drain-source voltage -60 V max and continuous drain current -3.7 A at TA=25°C (pins 7 and 8 are both D1). |
| 8 | D1 | passive | Drain of P-channel MOSFET 1; drain-source voltage -60 V max and continuous drain current -3.7 A at TA=25°C (pins 7 and 8 are both D1). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Bruckewell |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -60 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current | ID |  |  | -3.7 | A | TA=25°C | 2 |
| Continuous Drain Current | ID |  |  | -3 | A | TA=70°C | 2 |
| Pulsed Drain Current | IDM |  |  | -7.5 | A |  | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 35.4 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A | 2 |
| Avalanche Current | IAS |  |  | -26.6 | A |  | 2 |
| Power Dissipation | PD |  |  | 1.5 | W | TA=25°C | 2 |
| Operating Junction and Storage Temperature | TJ/TSTG | -55 |  | 150 | °C |  | 2 |
| Maximum Junction-to-Ambient | RθJA |  |  | 85 | °C/W |  | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 |  | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250μA | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | μA | VDS=-48V, VGS=0V, TJ=25°C | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -5 | μA | VDS=-48V, VGS=0V, TJ=55°C | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 58 | 70 | mΩ | VGS=-10V, ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 78 | 105 | mΩ | VGS=-4.5V, ID=-2A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | IS=-1A, VGS=0V, TJ=25°C | 2 |
| Continuous Source Current | IS |  |  | -3.7 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -7.5 | A | VG=VD=0V, Force Current | 2 |
| Forward Transconductance | gfs |  | 15 |  | S | VDS=-5V, ID=-3A | 2 |
| Total Gate Charge | Qg |  | 9.86 |  | nC | VDS=-48V, ID=-3A, VGS=-4.5V | 3 |
| Gate-Source Charge | Qgs |  | 3.08 |  | nC | VDS=-48V, ID=-3A, VGS=-4.5V | 3 |
| Gate-Drain Charge | Qgd |  | 2.95 |  | nC | VDS=-48V, ID=-3A, VGS=-4.5V | 3 |
| Turn-On Delay Time | td(on) |  | 28.8 |  | ns | VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 3 |
| Rise Time | tr |  | 19.8 |  | ns | VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 60.8 |  | ns | VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 3 |
| Fall Time | tf |  | 7.2 |  | ns | VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 3 |
| Input Capacitance | CISS |  | 1447 |  | pF | VDS=-15V, VGS=0V, f=1.0MHz | 3 |
| Output Capacitance | COSS |  | 97.3 |  | pF | VDS=-15V, VGS=0V, f=1.0MHz | 3 |
| Reverse Transfer Capacitance | CRSS |  | 70 |  | pF | VDS=-15V, VGS=0V, f=1.0MHz | 3 |
| Gate Resistance | Rg |  | 13.5 |  | Ω | VGS=VDS=0V, f=1.0MHz | 3 |

## CAD (KiCad official)

- Symbol: `MSQ60P04D`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `msq60p04d-etched.step` / `msq60p04d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `msq60p04d.step` / `msq60p04d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Bruckewell datasheet](docs/msq60p04d-datasheet.pdf) (6 pp, sha256 `46702879f6dcfceb`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/msq60p04d-datasheet.pdf)