component
MSQ60P04D
Public Made by Adomby adom
Bruckewell MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| msq60p04d-etched.glb | 17d ago |
| msq60p04d-etched.step | 17d ago |
| msq60p04d-hero.glb | 17d ago |
| msq60p04d-hero.overlay.json | 17d ago |
| msq60p04d.glb | 17d ago |
| msq60p04d.kicad_mod | 17d ago |
| msq60p04d.kicad_sym | 17d ago |
| msq60p04d.lbr | 17d ago |
| msq60p04d.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MSQ60P04D
Bruckewell · MOSFETs · SOP-8
MSQ60P04D from Bruckewell, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; body diode anode, with VDS rated -60 V and continuous source current -3.7 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage limited to ±20 V with threshold of -1.2 V to -2.5 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; body diode anode, with VDS rated -60 V and continuous source current -3.7 A. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage limited to ±20 V with threshold of -1.2 V to -2.5 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; drain-source voltage -60 V max and continuous drain current -3.7 A at TA=25°C (pins 5 and 6 are both D2). |
| 6 | D2 | passive | Drain of P-channel MOSFET 2; drain-source voltage -60 V max and continuous drain current -3.7 A at TA=25°C (pins 5 and 6 are both D2). |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; drain-source voltage -60 V max and continuous drain current -3.7 A at TA=25°C (pins 7 and 8 are both D1). |
| 8 | D1 | passive | Drain of P-channel MOSFET 1; drain-source voltage -60 V max and continuous drain current -3.7 A at TA=25°C (pins 7 and 8 are both D1). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bruckewell |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -3.7 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | -3 | A | TA=70°C | 2 | ||
| Pulsed Drain Current | IDM | -7.5 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 35.4 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A | 2 | ||
| Avalanche Current | IAS | -26.6 | A | 2 | |||
| Power Dissipation | PD | 1.5 | W | TA=25°C | 2 | ||
| Operating Junction and Storage Temperature | TJ/TSTG | -55 | 150 | °C | 2 | ||
| Maximum Junction-to-Ambient | RθJA | 85 | °C/W | 2 | |||
| Gate Threshold Voltage | VGS(th) | -1.2 | -2.5 | V | VDS=VGS, ID=-250μA | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250μA | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | μA | VDS=-48V, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | μA | VDS=-48V, VGS=0V, TJ=55°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 58 | 70 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 78 | 105 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-1A, VGS=0V, TJ=25°C | 2 | ||
| Continuous Source Current | IS | -3.7 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -7.5 | A | VG=VD=0V, Force Current | 2 | ||
| Forward Transconductance | gfs | 15 | S | VDS=-5V, ID=-3A | 2 | ||
| Total Gate Charge | Qg | 9.86 | nC | VDS=-48V, ID=-3A, VGS=-4.5V | 3 | ||
| Gate-Source Charge | Qgs | 3.08 | nC | VDS=-48V, ID=-3A, VGS=-4.5V | 3 | ||
| Gate-Drain Charge | Qgd | 2.95 | nC | VDS=-48V, ID=-3A, VGS=-4.5V | 3 | ||
| Turn-On Delay Time | td(on) | 28.8 | ns | VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 3 | ||
| Rise Time | tr | 19.8 | ns | VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 3 | ||
| Turn-Off Delay Time | td(off) | 60.8 | ns | VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 3 | ||
| Fall Time | tf | 7.2 | ns | VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 3 | ||
| Input Capacitance | CISS | 1447 | pF | VDS=-15V, VGS=0V, f=1.0MHz | 3 | ||
| Output Capacitance | COSS | 97.3 | pF | VDS=-15V, VGS=0V, f=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | CRSS | 70 | pF | VDS=-15V, VGS=0V, f=1.0MHz | 3 | ||
| Gate Resistance | Rg | 13.5 | Ω | VGS=VDS=0V, f=1.0MHz | 3 |
CAD (KiCad official)
- Symbol:
MSQ60P04D - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
msq60p04d-etched.step/msq60p04d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msq60p04d.step/msq60p04d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bruckewell datasheet (6 pp, sha256
46702879f6dcfceb, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).