# MSK20P80GNF

**MSKSEMI** · MOSFETs · DFN-8(5x6)

MSK20P80GNF from MSKSEMI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins (S) on the pin-1 side of the DFN5X6-8L package. |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins (S) on the pin-1 side of the DFN5X6-8L package. |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins (S) on the pin-1 side of the DFN5X6-8L package. |
| 4 | G | input | Gate of the P-channel MOSFET, with absolute maximum VGS of ±12 V and a threshold of -0.4 V to -1.0 V. |
| 5 | D | passive | Drain of the P-channel MOSFET (VDS -18 V, ID -80 A), one of four drain pins on the side opposite the sources. |
| 6 | D | passive | Drain of the P-channel MOSFET (VDS -18 V, ID -80 A), one of four drain pins on the side opposite the sources. |
| 7 | D | passive | Drain of the P-channel MOSFET (VDS -18 V, ID -80 A), one of four drain pins on the side opposite the sources. |
| 8 | D | passive | Drain of the P-channel MOSFET (VDS -18 V, ID -80 A), one of four drain pins on the side opposite the sources. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -18 | V |  | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 2 |
| Continuous Drain Current | ID@TC=25℃ |  |  | -80 | A | VGS @ 10V | 2 |
| Pulsed Drain Current | IDM |  |  | -360 | A |  | 2 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 41.67 | W | TC=25℃ | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62 | ℃/W |  | 2 |
| Thermal Resistance Junction-Case | RθJC |  |  | 3 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -18 |  |  | V | VGS=0V, ID=-250uA | 3 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current | IDSS |  |  | -30 | uA | VDS=-16V, VGS=0V, TJ=125℃ | 3 |
| Gate-Source Leakage Current | IGSS | -500 |  | 500 | nA | VGS=±12V, VDS=0V | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 2.5 | 3 | mΩ | VGS=-4.5V, ID=-20A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 3.3 | 4.5 | mΩ | VGS=-2.5V, ID=-20A | 3 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -1 | V | VGS=VDS, ID=-250uA | 3 |
| Total Gate Charge | Qg |  | 149 | 225 | nC | VDS=-16V, VGS=-4.5V, ID=-5A | 3 |
| Gate-Source Charge | Qgs |  | 14.4 | 22 | nC | VDS=-16V, VGS=-4.5V, ID=-5A | 3 |
| Gate-Drain Charge | Qgd |  | 42.8 | 65 | nC | VDS=-16V, VGS=-4.5V, ID=-5A | 3 |
| Turn-On Delay Time | Td(on) |  | 21.2 | 42 | nS | VDD=-15V, VGS=-4.5V, RG=25Ω, ID=-1A | 3 |
| Rise Time | Tr |  | 20.6 | 40 | nS | VDD=-15V, VGS=-4.5V, RG=25Ω, ID=-1A | 3 |
| Turn-Off Delay Time | Td(off) |  | 26 | 52 | nS | VDD=-15V, VGS=-4.5V, RG=25Ω, ID=-1A | 3 |
| Fall Time | Tf |  | 400 | 600 | nS | VDD=-15V, VGS=-4.5V, RG=25Ω, ID=-1A | 3 |
| Input Capacitance | Ciss |  | 12000 | 16000 | pF | VDS=-15V, VGS=0V, F=1MHz | 3 |
| Output Capacitance | Coss |  | 1670 | 2500 | pF | VDS=-15V, VGS=0V, F=1MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 730 | 1100 | pF | VDS=-15V, VGS=0V, F=1MHz | 3 |
| Continuous Source Current | IS |  |  | -85 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current | ISM |  |  | -190 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `MSK20P80GNF`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `msk20p80gnf-etched.step` / `msk20p80gnf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `msk20p80gnf.step` / `msk20p80gnf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588945004475920384) (7 pp, sha256 `579b8d1ed09b24f2`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/msk20p80gnf-datasheet.pdf)