component
MSK20P80GNF
Public Made by Adomby adom
MSKSEMI MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| msk20p80gnf-etched.step | 6d ago |
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MSK20P80GNF
MSKSEMI · MOSFETs · DFN-8(5x6)
MSK20P80GNF from MSKSEMI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins (S) on the pin-1 side of the DFN5X6-8L package. |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins (S) on the pin-1 side of the DFN5X6-8L package. |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins (S) on the pin-1 side of the DFN5X6-8L package. |
| 4 | G | input | Gate of the P-channel MOSFET, with absolute maximum VGS of ±12 V and a threshold of -0.4 V to -1.0 V. |
| 5 | D | passive | Drain of the P-channel MOSFET (VDS -18 V, ID -80 A), one of four drain pins on the side opposite the sources. |
| 6 | D | passive | Drain of the P-channel MOSFET (VDS -18 V, ID -80 A), one of four drain pins on the side opposite the sources. |
| 7 | D | passive | Drain of the P-channel MOSFET (VDS -18 V, ID -80 A), one of four drain pins on the side opposite the sources. |
| 8 | D | passive | Drain of the P-channel MOSFET (VDS -18 V, ID -80 A), one of four drain pins on the side opposite the sources. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -18 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID@TC=25℃ | -80 | A | VGS @ 10V | 2 | ||
| Pulsed Drain Current | IDM | -360 | A | 2 | |||
| Total Power Dissipation | PD@TC=25℃ | 41.67 | W | TC=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 2 | |||
| Thermal Resistance Junction-Case | RθJC | 3 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | -18 | V | VGS=0V, ID=-250uA | 3 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | -30 | uA | VDS=-16V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -500 | 500 | nA | VGS=±12V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.5 | 3 | mΩ | VGS=-4.5V, ID=-20A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.3 | 4.5 | mΩ | VGS=-2.5V, ID=-20A | 3 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -1 | V | VGS=VDS, ID=-250uA | 3 |
| Total Gate Charge | Qg | 149 | 225 | nC | VDS=-16V, VGS=-4.5V, ID=-5A | 3 | |
| Gate-Source Charge | Qgs | 14.4 | 22 | nC | VDS=-16V, VGS=-4.5V, ID=-5A | 3 | |
| Gate-Drain Charge | Qgd | 42.8 | 65 | nC | VDS=-16V, VGS=-4.5V, ID=-5A | 3 | |
| Turn-On Delay Time | Td(on) | 21.2 | 42 | nS | VDD=-15V, VGS=-4.5V, RG=25Ω, ID=-1A | 3 | |
| Rise Time | Tr | 20.6 | 40 | nS | VDD=-15V, VGS=-4.5V, RG=25Ω, ID=-1A | 3 | |
| Turn-Off Delay Time | Td(off) | 26 | 52 | nS | VDD=-15V, VGS=-4.5V, RG=25Ω, ID=-1A | 3 | |
| Fall Time | Tf | 400 | 600 | nS | VDD=-15V, VGS=-4.5V, RG=25Ω, ID=-1A | 3 | |
| Input Capacitance | Ciss | 12000 | 16000 | pF | VDS=-15V, VGS=0V, F=1MHz | 3 | |
| Output Capacitance | Coss | 1670 | 2500 | pF | VDS=-15V, VGS=0V, F=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 730 | 1100 | pF | VDS=-15V, VGS=0V, F=1MHz | 3 | |
| Continuous Source Current | IS | -85 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | -190 | A | 3 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
MSK20P80GNF - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
msk20p80gnf-etched.step/msk20p80gnf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msk20p80gnf.step/msk20p80gnf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
579b8d1ed09b24f2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).