component
MSJ001C
Public Made by Adomby adom
miracle MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MSJ001C
miracle · MOSFETs · TO-220
MSJ001C from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20V (VGS(th) 2.5V min to 4.5V max at ID = 250μA, RDS(on) specified at VGS = 10V). |
| 2 | D | passive | Drain; VDS rated 200V, continuous drain current 109A at TC = 25°C and 436A pulsed, connected to the mounting tab. |
| 3 | S | passive | Source; carries the same 109A continuous current at TC = 25°C as the drain and the body diode forward current of 109A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 200V, VGS = 0V | 1 | ||
| Forward Gate Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 1 | |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3.3 | 4.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 8.6 | 10 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Drain-Source Diode Forward Continuous Current | IS | 109 | A | VG = VD = 0V, Force Current | 2 | ||
| Maximum Pulsed Diode Current | ISM | 436 | A | VG = VD = 0V, Force Current | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0V, IS = 20A | 2 | |
| Drain-Source Voltage | VDS | 200 | V | TJ = +25 ℃ to +150 ℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 109 | A | TC = 25°C | 1 | ||
| Drain Current-Continuous | ID | 69 | A | TC = 100°C | 1 | ||
| Drain Current-Pulsed | IDM | 436 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 312 | W | TC = 25°C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 1225 | mJ | L = 0.5mH, VDD = 30V, IAS = 70A, RG = 25Ω, Starting TJ = 25 ℃ | 1 | ||
| Operating Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.4 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 63 | °C/W | 1 | |||
| Gate Resistance | RG | 7 | Ω | VDS = VGS = 0V, f = 1.0MHz | 2 | ||
| Input Capacitance | Ciss | 8788 | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 455 | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 17 | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 | ||
| Turn-On Delay Time | td(on) | 30 | ns | VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω | 2 | ||
| Turn-On Rise Time | tr | 58 | ns | VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 98 | ns | VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω | 2 | ||
| Turn-Off Fall Time | tf | 43 | ns | VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω | 2 | ||
| Total Gate Charge | Qg | 122 | nC | VDS = 100V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Gate-Source Charge | Qgs | 43 | nC | VDS = 100V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Gate-Drain Charge | Qgd | 23 | nC | VDS = 100V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Body Diode Reverse Recovery Time | Trr | 186 | ns | IF = 20A, dIF/dt = 100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 743 | nC | IF = 20A, dIF/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
MSJ001C - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
msj001c-etched.step/msj001c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msj001c.step/msj001c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: miracle datasheet (6 pp, sha256
b8c6ef8edc0389d7, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MSJ001C
**miracle** · MOSFETs · TO-220
MSJ001C from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20V (VGS(th) 2.5V min to 4.5V max at ID = 250μA, RDS(on) specified at VGS = 10V). |
| 2 | D | passive | Drain; VDS rated 200V, continuous drain current 109A at TC = 25°C and 436A pulsed, connected to the mounting tab. |
| 3 | S | passive | Source; carries the same 109A continuous current at TC = 25°C as the drain and the body diode forward current of 109A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS = 0V, ID = 250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 200V, VGS = 0V | 1 |
| Forward Gate Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 1 |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3.3 | 4.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 8.6 | 10 | mΩ | VGS = 10V, ID = 20A | 2 |
| Drain-Source Diode Forward Continuous Current | IS | | | 109 | A | VG = VD = 0V, Force Current | 2 |
| Maximum Pulsed Diode Current | ISM | | | 436 | A | VG = VD = 0V, Force Current | 2 |
| Drain-Source Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | VGS = 0V, IS = 20A | 2 |
| Drain-Source Voltage | VDS | | | 200 | V | TJ = +25 ℃ to +150 ℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 109 | A | TC = 25°C | 1 |
| Drain Current-Continuous | ID | | | 69 | A | TC = 100°C | 1 |
| Drain Current-Pulsed | IDM | | | 436 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD | | | 312 | W | TC = 25°C | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 1225 | mJ | L = 0.5mH, VDD = 30V, IAS = 70A, RG = 25Ω, Starting TJ = 25 ℃ | 1 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 0.4 | °C/W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 63 | °C/W | | 1 |
| Gate Resistance | RG | | 7 | | Ω | VDS = VGS = 0V, f = 1.0MHz | 2 |
| Input Capacitance | Ciss | | 8788 | | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 455 | | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 17 | | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 |
| Turn-On Delay Time | td(on) | | 30 | | ns | VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω | 2 |
| Turn-On Rise Time | tr | | 58 | | ns | VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω | 2 |
| Turn-Off Delay Time | td(off) | | 98 | | ns | VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω | 2 |
| Turn-Off Fall Time | tf | | 43 | | ns | VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω | 2 |
| Total Gate Charge | Qg | | 122 | | nC | VDS = 100V, VGS = 0 to 10V, ID = 20A | 2 |
| Gate-Source Charge | Qgs | | 43 | | nC | VDS = 100V, VGS = 0 to 10V, ID = 20A | 2 |
| Gate-Drain Charge | Qgd | | 23 | | nC | VDS = 100V, VGS = 0 to 10V, ID = 20A | 2 |
| Body Diode Reverse Recovery Time | Trr | | 186 | | ns | IF = 20A, dIF/dt = 100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 743 | | nC | IF = 20A, dIF/dt = 100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `MSJ001C`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `msj001c-etched.step` / `msj001c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `msj001c.step` / `msj001c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [miracle datasheet](docs/msj001c-datasheet.pdf) (6 pp, sha256 `b8c6ef8edc0389d7`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/msj001c-datasheet.pdf)