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MSJ001C

miracle · MOSFETs · TO-220

MSJ001C from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS up to ±20V (VGS(th) 2.5V min to 4.5V max at ID = 250μA, RDS(on) specified at VGS = 10V).
2 D passive Drain; VDS rated 200V, continuous drain current 109A at TC = 25°C and 436A pulsed, connected to the mounting tab.
3 S passive Source; carries the same 109A continuous current at TC = 25°C as the drain and the body diode forward current of 109A.

Key specifications

Parameter Value
Manufacturer miracle
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 200V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 2.5 3.3 4.5 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 8.6 10 mΩ VGS = 10V, ID = 20A 2
Drain-Source Diode Forward Continuous Current IS 109 A VG = VD = 0V, Force Current 2
Maximum Pulsed Diode Current ISM 436 A VG = VD = 0V, Force Current 2
Drain-Source Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 20A 2
Drain-Source Voltage VDS 200 V TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 109 A TC = 25°C 1
Drain Current-Continuous ID 69 A TC = 100°C 1
Drain Current-Pulsed IDM 436 A Repetitive rating: pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 312 W TC = 25°C 1
Single Pulsed Avalanche Energy EAS 1225 mJ L = 0.5mH, VDD = 30V, IAS = 70A, RG = 25Ω, Starting TJ = 25 ℃ 1
Operating Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 0.4 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 63 °C/W 1
Gate Resistance RG 7 Ω VDS = VGS = 0V, f = 1.0MHz 2
Input Capacitance Ciss 8788 pF VDS = 100V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 455 pF VDS = 100V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 17 pF VDS = 100V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 30 ns VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω 2
Turn-On Rise Time tr 58 ns VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω 2
Turn-Off Delay Time td(off) 98 ns VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω 2
Turn-Off Fall Time tf 43 ns VDS = 100V, VGS = 10V, RL = 5.0Ω, RG = 6.0Ω 2
Total Gate Charge Qg 122 nC VDS = 100V, VGS = 0 to 10V, ID = 20A 2
Gate-Source Charge Qgs 43 nC VDS = 100V, VGS = 0 to 10V, ID = 20A 2
Gate-Drain Charge Qgd 23 nC VDS = 100V, VGS = 0 to 10V, ID = 20A 2
Body Diode Reverse Recovery Time Trr 186 ns IF = 20A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 743 nC IF = 20A, dIF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MSJ001C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: msj001c-etched.step / msj001c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); msj001c.step / msj001c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (6 pp, sha256 b8c6ef8edc0389d7, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF