# MSG20T120HLE0

**MASPOWER** · IGBT Transistors / Modules · TO-263

MSG20T120HLE0 from MASPOWER, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage limited to ±30 V (VGES) with threshold VGE(th) of 5.0 to 7.0 V at IC = 250 µA. |
| 2 | C | passive | Collector, connected to the exposed tab (labelled D in the package photo); VCES is 1200 V and IC is 40 A at TC=25°C and 20 A at TC=100°C. |
| 3 | E | passive | Emitter (labelled S in the package photo), the current return of the IGBT, with the co-packed diode connected between emitter and collector (IF 20 A at TC=100°C). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MASPOWER |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter voltage | VCES |  |  | 1200 | V |  | 1 |
| Gate-emitter voltage | VGES | -30 |  | 30 | V |  | 1 |
| Collector current | IC |  |  | 40 | A | TC=25°C | 1 |
| Collector current | IC |  |  | 20 | A | TC=100°C | 1 |
| Pulsed collector current | ICM |  |  | 60 | A | Pulse time limited by Tjmax | 1 |
| Diode forward current | IF |  |  | 20 | A | TC = 100°C | 1 |
| Diode pulsed current | IFM |  |  | 120 | A | Pulse time limited by Tjmax | 1 |
| Power dissipation | PD |  |  | 227 | W | TC=25°C | 1 |
| Power dissipation | PD |  |  | 132 | W | TC=100°C | 1 |
| Operating junction and storage temperature range | TJ | -55 |  | 150 | °C |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum lead temperature for soldering purposes | TL |  |  | 300 | ℃ |  | 1 |
| Collector-emitter breakdown voltage | BVCES | 1200 |  |  | V | IC = 500μA, VGE = 0V | 1 |
| Gate-emitter threshold voltage | VGE(th) | 5 |  | 7 | V | VCE = VGE, IC = 250μA | 1 |
| Zero gate voltage collector current | ICES |  |  | 200 | μA | VCE = 1200V, VGE = 0V | 1 |
| Gate-emitter leakage current | IGES |  |  | 100 | nA | VGE = 20V, VCE = 0V | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  | 1.9 | 2.5 | V | IC = 20A, VGE = 15V, TC = 25°C | 1 |
| Diode forward voltage | VF |  | 2.3 | 3.5 | V | IF=20A, TC=25℃ | 2 |
| Thermal resistance junction-to-ambient | RθJA |  | 62.5 |  | °C/W |  | 2 |
| Thermal resistance junction-to-case for IGBT | RθJC |  | 0.55 |  | °C/W |  | 2 |
| Thermal resistance junction-to-case for diode | RθJC |  | 0.65 |  | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `MSG20T120HLE0`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `msg20t120hle0-etched.step` / `msg20t120hle0-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `msg20t120hle0.step` / `msg20t120hle0.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MASPOWER datasheet](docs/msg20t120hle0-datasheet.pdf) (8 pp, sha256 `67714d4533f0e775`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/msg20t120hle0-datasheet.pdf)