component

MSG20T120HLE0

Public Made by Adom

by adom

MASPOWER IGBT Transistors / Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MSG20T120HLE0

MASPOWER · IGBT Transistors / Modules · TO-263

MSG20T120HLE0 from MASPOWER, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage limited to ±30 V (VGES) with threshold VGE(th) of 5.0 to 7.0 V at IC = 250 µA.
2 C passive Collector, connected to the exposed tab (labelled D in the package photo); VCES is 1200 V and IC is 40 A at TC=25°C and 20 A at TC=100°C.
3 E passive Emitter (labelled S in the package photo), the current return of the IGBT, with the co-packed diode connected between emitter and collector (IF 20 A at TC=100°C).

Key specifications

Parameter Value
Manufacturer MASPOWER
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter voltage VCES 1200 V 1
Gate-emitter voltage VGES -30 30 V 1
Collector current IC 40 A TC=25°C 1
Collector current IC 20 A TC=100°C 1
Pulsed collector current ICM 60 A Pulse time limited by Tjmax 1
Diode forward current IF 20 A TC = 100°C 1
Diode pulsed current IFM 120 A Pulse time limited by Tjmax 1
Power dissipation PD 227 W TC=25°C 1
Power dissipation PD 132 W TC=100°C 1
Operating junction and storage temperature range TJ -55 150 °C 1
Storage temperature range Tstg -55 150 °C 1
Maximum lead temperature for soldering purposes TL 300 ℃ 1
Collector-emitter breakdown voltage BVCES 1200 V IC = 500μA, VGE = 0V 1
Gate-emitter threshold voltage VGE(th) 5 7 V VCE = VGE, IC = 250μA 1
Zero gate voltage collector current ICES 200 μA VCE = 1200V, VGE = 0V 1
Gate-emitter leakage current IGES 100 nA VGE = 20V, VCE = 0V 1
Collector-emitter saturation voltage VCE(sat) 1.9 2.5 V IC = 20A, VGE = 15V, TC = 25°C 1
Diode forward voltage VF 2.3 3.5 V IF=20A, TC=25℃ 2
Thermal resistance junction-to-ambient RθJA 62.5 °C/W 2
Thermal resistance junction-to-case for IGBT RθJC 0.55 °C/W 2
Thermal resistance junction-to-case for diode RθJC 0.65 °C/W 2

CAD (KiCad official)

  • Symbol: MSG20T120HLE0
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: msg20t120hle0-etched.step / msg20t120hle0-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); msg20t120hle0.step / msg20t120hle0.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MASPOWER datasheet (8 pp, sha256 67714d4533f0e775, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF