component
MSE002C
Public Made by Adomby adom
miracle MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MSE002C
miracle · MOSFETs · TO-220
MSE002C from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20V maximum, with a threshold of 2.0V min to 4.0V max at ID = 250μA. |
| 2 | D | passive | Drain, rated 150V drain-source and 130A continuous at TC = 25°C (190A pulsed); also connected to the mounting tab. |
| 3 | S | passive | Source, the current return terminal of the N-channel MOSFET, carrying up to 130A continuous at TC = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS = 0V, ID = 250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 120V, VGS = 0V | 1 | ||
| Forward Gate Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 1 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3.2 | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 5.2 | 6.2 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Drain-Source Diode Forward Continuous Current | IS | 130 | A | VG = VD = 0V, Force Current | 2 | ||
| Maximum Pulsed Current (diode) | ISM | 190 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1 | V | VGS = 0V, IS = 1A | 2 | ||
| Drain-Source Voltage | VDS | 150 | V | TJ = +25 ℃ to +150 ℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Tc = 25°C | 1 | |
| Drain Current-Continuous | ID | 130 | A | TC = 25°C | 1 | ||
| Drain Current-Continuous | ID | 84 | A | TC = 100°C | 1 | ||
| Drain Current-Pulsed | IDM | 190 | A | Tc = 25°C | 1 | ||
| Maximum Power Dissipation | PD | 240 | W | TC = 25°C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 900 | mJ | L = 0.5mH, VDD = 25V, IAS = 60A, RG = 25Ω Starting TJ = 25 ℃ | 1 | ||
| Operating Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.52 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 45 | °C/W | 1 | |||
| Gate Resistance | Rg | 3.8 | Ω | f = 1.0MHz | 2 | ||
| Input Capacitance | Ciss | 5800 | pF | VDS = 75V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 550 | pF | VDS = 75V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 17 | pF | VDS = 75V, VGS = 0V, f = 1.0MHz | 2 | ||
| Turn-On Delay Time | td(on) | 21 | ns | VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω | 2 | ||
| Turn-On Rise Time | tr | 39 | ns | VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 63 | ns | VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω | 2 | ||
| Turn-Off Fall Time | tf | 32 | ns | VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω | 2 | ||
| Total Gate Charge | Qg | 83 | nC | VDS = 75V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Gate-Source Charge | Qgs | 28 | nC | VDS = 75V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Gate-Drain Charge | Qgd | 19.2 | nC | VDS = 75V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Body Diode Reverse Recovery Time | Trr | 98 | ns | IF = 15A, dIF/dt = 100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 316 | nC | IF = 15A, dIF/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
MSE002C - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
mse002c-etched.step/mse002c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mse002c.step/mse002c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: miracle datasheet (6 pp, sha256
d38f94c9217de878, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MSE002C
**miracle** · MOSFETs · TO-220
MSE002C from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20V maximum, with a threshold of 2.0V min to 4.0V max at ID = 250μA. |
| 2 | D | passive | Drain, rated 150V drain-source and 130A continuous at TC = 25°C (190A pulsed); also connected to the mounting tab. |
| 3 | S | passive | Source, the current return terminal of the N-channel MOSFET, carrying up to 130A continuous at TC = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | | | V | VGS = 0V, ID = 250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 120V, VGS = 0V | 1 |
| Forward Gate Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 1 |
| Gate Threshold Voltage | VGS(th) | 2 | 3.2 | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 5.2 | 6.2 | mΩ | VGS = 10V, ID = 20A | 2 |
| Drain-Source Diode Forward Continuous Current | IS | | | 130 | A | VG = VD = 0V, Force Current | 2 |
| Maximum Pulsed Current (diode) | ISM | | | 190 | A | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1 | V | VGS = 0V, IS = 1A | 2 |
| Drain-Source Voltage | VDS | | | 150 | V | TJ = +25 ℃ to +150 ℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | Tc = 25°C | 1 |
| Drain Current-Continuous | ID | | | 130 | A | TC = 25°C | 1 |
| Drain Current-Continuous | ID | | | 84 | A | TC = 100°C | 1 |
| Drain Current-Pulsed | IDM | | | 190 | A | Tc = 25°C | 1 |
| Maximum Power Dissipation | PD | | | 240 | W | TC = 25°C | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 900 | mJ | L = 0.5mH, VDD = 25V, IAS = 60A, RG = 25Ω Starting TJ = 25 ℃ | 1 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Case | RθJC | | 0.52 | | °C/W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | 45 | | °C/W | | 1 |
| Gate Resistance | Rg | | 3.8 | | Ω | f = 1.0MHz | 2 |
| Input Capacitance | Ciss | | 5800 | | pF | VDS = 75V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 550 | | pF | VDS = 75V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 17 | | pF | VDS = 75V, VGS = 0V, f = 1.0MHz | 2 |
| Turn-On Delay Time | td(on) | | 21 | | ns | VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω | 2 |
| Turn-On Rise Time | tr | | 39 | | ns | VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 63 | | ns | VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω | 2 |
| Turn-Off Fall Time | tf | | 32 | | ns | VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω | 2 |
| Total Gate Charge | Qg | | 83 | | nC | VDS = 75V, VGS = 0 to 10V, ID = 20A | 2 |
| Gate-Source Charge | Qgs | | 28 | | nC | VDS = 75V, VGS = 0 to 10V, ID = 20A | 2 |
| Gate-Drain Charge | Qgd | | 19.2 | | nC | VDS = 75V, VGS = 0 to 10V, ID = 20A | 2 |
| Body Diode Reverse Recovery Time | Trr | | 98 | | ns | IF = 15A, dIF/dt = 100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 316 | | nC | IF = 15A, dIF/dt = 100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `MSE002C`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `mse002c-etched.step` / `mse002c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mse002c.step` / `mse002c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [miracle datasheet](docs/mse002c-datasheet.pdf) (6 pp, sha256 `d38f94c9217de878`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mse002c-datasheet.pdf)