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MSE002C

Public Made by Adom

by adom

miracle MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MSE002C

miracle · MOSFETs · TO-220

MSE002C from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20V maximum, with a threshold of 2.0V min to 4.0V max at ID = 250μA.
2 D passive Drain, rated 150V drain-source and 130A continuous at TC = 25°C (190A pulsed); also connected to the mounting tab.
3 S passive Source, the current return terminal of the N-channel MOSFET, carrying up to 130A continuous at TC = 25°C.

Key specifications

Parameter Value
Manufacturer miracle
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 150 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 120V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 2 3.2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 5.2 6.2 mΩ VGS = 10V, ID = 20A 2
Drain-Source Diode Forward Continuous Current IS 130 A VG = VD = 0V, Force Current 2
Maximum Pulsed Current (diode) ISM 190 A 2
Drain-Source Diode Forward Voltage VSD 1 V VGS = 0V, IS = 1A 2
Drain-Source Voltage VDS 150 V TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -20 20 V Tc = 25°C 1
Drain Current-Continuous ID 130 A TC = 25°C 1
Drain Current-Continuous ID 84 A TC = 100°C 1
Drain Current-Pulsed IDM 190 A Tc = 25°C 1
Maximum Power Dissipation PD 240 W TC = 25°C 1
Single Pulsed Avalanche Energy EAS 900 mJ L = 0.5mH, VDD = 25V, IAS = 60A, RG = 25Ω Starting TJ = 25 ℃ 1
Operating Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 0.52 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 45 °C/W 1
Gate Resistance Rg 3.8 Ω f = 1.0MHz 2
Input Capacitance Ciss 5800 pF VDS = 75V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 550 pF VDS = 75V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 17 pF VDS = 75V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 21 ns VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω 2
Turn-On Rise Time tr 39 ns VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω 2
Turn-Off Delay Time td(off) 63 ns VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω 2
Turn-Off Fall Time tf 32 ns VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω 2
Total Gate Charge Qg 83 nC VDS = 75V, VGS = 0 to 10V, ID = 20A 2
Gate-Source Charge Qgs 28 nC VDS = 75V, VGS = 0 to 10V, ID = 20A 2
Gate-Drain Charge Qgd 19.2 nC VDS = 75V, VGS = 0 to 10V, ID = 20A 2
Body Diode Reverse Recovery Time Trr 98 ns IF = 15A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 316 nC IF = 15A, dIF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MSE002C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: mse002c-etched.step / mse002c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mse002c.step / mse002c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (6 pp, sha256 d38f94c9217de878, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF