component
MSD60P16
Public Made by Adomby adom
Bruckewell MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MSD60P16
Bruckewell · MOSFETs · TO-252
MSD60P16 from Bruckewell, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V and threshold of -1.0 to -2.5 V at ID=-250µA. |
| 2 | D | passive | Drain (center lead, connected to the mounting tab); VDS rated -60 V and continuous ID -16 A at TC=25°C. |
| 3 | S | passive | Source; continuous source current IS up to -16 A, with body-diode forward voltage max -1.0 V at IS=-8A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bruckewell |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -16 | A | TC=25°C | 2 | ||
| Continuous Drain Current | ID | -10 | A | TC=100°C | 2 | ||
| Pulsed Drain Current | IDM | -64 | A | 2 | |||
| Single Pulse Avalanche Current | IAS | -32 | A | L=0.1mH | 2 | ||
| Single Pulse Avalanche Energy | EAS | 51 | mJ | L=0.1mH | 2 | ||
| Power Dissipation | PD | 25 | W | TC=25°C | 2 | ||
| Power Dissipation | PD | 2 | W | TA=25°C | 2 | ||
| Operating Junction and Storage Temperature | TJ/TSTG | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | °C/W | 2 | |||
| Junction-to-Case Thermal Resistance | RθJC | 5 | °C/W | 2 | |||
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | µA | VDS=-60V, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Leakage Current | IDSS | -10 | µA | VDS=-48V, VGS=0V, TJ=125°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 40 | 48 | mΩ | VGS=-10V, ID=-8A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 55 | 65 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Single Pulse Avalanche Energy | EAS | 12.8 | mJ | VDD=-25V, L=0.1mH, IAS=-16A | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | IS=-8A, VGS=0V, TJ=25°C | 2 | ||
| Continuous Source Current | IS | -16 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -64 | A | VG=VD=0V, Force Current | 2 | ||
| Forward Transconductance | gfs | 10 | S | VDS=-10V, ID=-8A | 2 | ||
| Total Gate Charge | Qg | 22 | nC | VDS=-30V, ID=-8A, VGS=-10V | 3 | ||
| Gate-Source Charge | Qgs | 4.1 | nC | VDS=-30V, ID=-8A, VGS=-10V | 3 | ||
| Gate-Drain Charge | Qgd | 5.2 | nC | VDS=-30V, ID=-8A, VGS=-10V | 3 | ||
| Turn-On Delay Time | td(on) | 13 | ns | VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω | 3 | ||
| Rise Time | tr | 42 | ns | VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω | 3 | ||
| Turn-Off Delay Time | td(off) | 65 | ns | VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω | 3 | ||
| Fall Time | tf | 16 | ns | VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω | 3 | ||
| Input Capacitance | CISS | 1256 | pF | VDS=-30V, VGS=0V, f=1.0MHz | 3 | ||
| Output Capacitance | COSS | 87 | pF | VDS=-30V, VGS=0V, f=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | CRSS | 59 | pF | VDS=-30V, VGS=0V, f=1.0MHz | 3 | ||
| Gate Resistance | Rg | 15 | Ω | VGS=VDS=0V, f=1.0MHz | 3 |
CAD (KiCad official)
- Symbol:
MSD60P16 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
msd60p16-etched.step/msd60p16-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msd60p16.step/msd60p16.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bruckewell datasheet (6 pp, sha256
91b2f25bbcbcad12, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MSD60P16
**Bruckewell** · MOSFETs · TO-252
MSD60P16 from Bruckewell, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V and threshold of -1.0 to -2.5 V at ID=-250µA. |
| 2 | D | passive | Drain (center lead, connected to the mounting tab); VDS rated -60 V and continuous ID -16 A at TC=25°C. |
| 3 | S | passive | Source; continuous source current IS up to -16 A, with body-diode forward voltage max -1.0 V at IS=-8A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bruckewell |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -60 | V | | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | -16 | A | TC=25°C | 2 |
| Continuous Drain Current | ID | | | -10 | A | TC=100°C | 2 |
| Pulsed Drain Current | IDM | | | -64 | A | | 2 |
| Single Pulse Avalanche Current | IAS | | | -32 | A | L=0.1mH | 2 |
| Single Pulse Avalanche Energy | EAS | | | 51 | mJ | L=0.1mH | 2 |
| Power Dissipation | PD | | | 25 | W | TC=25°C | 2 |
| Power Dissipation | PD | | | 2 | W | TA=25°C | 2 |
| Operating Junction and Storage Temperature | TJ/TSTG | -55 | | 150 | °C | | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62.5 | °C/W | | 2 |
| Junction-to-Case Thermal Resistance | RθJC | | | 5 | °C/W | | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, ID=-250µA | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | µA | VDS=-60V, VGS=0V, TJ=25°C | 2 |
| Drain-Source Leakage Current | IDSS | | | -10 | µA | VDS=-48V, VGS=0V, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 40 | 48 | mΩ | VGS=-10V, ID=-8A | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 55 | 65 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Single Pulse Avalanche Energy | EAS | 12.8 | | | mJ | VDD=-25V, L=0.1mH, IAS=-16A | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | IS=-8A, VGS=0V, TJ=25°C | 2 |
| Continuous Source Current | IS | | | -16 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -64 | A | VG=VD=0V, Force Current | 2 |
| Forward Transconductance | gfs | | 10 | | S | VDS=-10V, ID=-8A | 2 |
| Total Gate Charge | Qg | | 22 | | nC | VDS=-30V, ID=-8A, VGS=-10V | 3 |
| Gate-Source Charge | Qgs | | 4.1 | | nC | VDS=-30V, ID=-8A, VGS=-10V | 3 |
| Gate-Drain Charge | Qgd | | 5.2 | | nC | VDS=-30V, ID=-8A, VGS=-10V | 3 |
| Turn-On Delay Time | td(on) | | 13 | | ns | VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω | 3 |
| Rise Time | tr | | 42 | | ns | VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω | 3 |
| Turn-Off Delay Time | td(off) | | 65 | | ns | VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω | 3 |
| Fall Time | tf | | 16 | | ns | VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω | 3 |
| Input Capacitance | CISS | | 1256 | | pF | VDS=-30V, VGS=0V, f=1.0MHz | 3 |
| Output Capacitance | COSS | | 87 | | pF | VDS=-30V, VGS=0V, f=1.0MHz | 3 |
| Reverse Transfer Capacitance | CRSS | | 59 | | pF | VDS=-30V, VGS=0V, f=1.0MHz | 3 |
| Gate Resistance | Rg | | 15 | | Ω | VGS=VDS=0V, f=1.0MHz | 3 |
## CAD (KiCad official)
- Symbol: `MSD60P16`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `msd60p16-etched.step` / `msd60p16-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `msd60p16.step` / `msd60p16.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Bruckewell datasheet](docs/msd60p16-datasheet.pdf) (6 pp, sha256 `91b2f25bbcbcad12`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/msd60p16-datasheet.pdf)