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MSD60P16

Public Made by Adom

by adom

Bruckewell MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MSD60P16

Bruckewell · MOSFETs · TO-252

MSD60P16 from Bruckewell, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated ±20 V and threshold of -1.0 to -2.5 V at ID=-250µA.
2 D passive Drain (center lead, connected to the mounting tab); VDS rated -60 V and continuous ID -16 A at TC=25°C.
3 S passive Source; continuous source current IS up to -16 A, with body-diode forward voltage max -1.0 V at IS=-8A.

Key specifications

Parameter Value
Manufacturer Bruckewell
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID -16 A TC=25°C 2
Continuous Drain Current ID -10 A TC=100°C 2
Pulsed Drain Current IDM -64 A 2
Single Pulse Avalanche Current IAS -32 A L=0.1mH 2
Single Pulse Avalanche Energy EAS 51 mJ L=0.1mH 2
Power Dissipation PD 25 W TC=25°C 2
Power Dissipation PD 2 W TA=25°C 2
Operating Junction and Storage Temperature TJ/TSTG -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W 2
Junction-to-Case Thermal Resistance RθJC 5 °C/W 2
Gate Threshold Voltage VGS(th) -1 -1.7 -2.5 V VDS=VGS, ID=-250µA 2
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250µA 2
Gate-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Drain-Source Leakage Current IDSS -1 µA VDS=-60V, VGS=0V, TJ=25°C 2
Drain-Source Leakage Current IDSS -10 µA VDS=-48V, VGS=0V, TJ=125°C 2
Static Drain-Source On-Resistance RDS(on) 40 48 mΩ VGS=-10V, ID=-8A 2
Static Drain-Source On-Resistance RDS(on) 55 65 mΩ VGS=-4.5V, ID=-4A 2
Single Pulse Avalanche Energy EAS 12.8 mJ VDD=-25V, L=0.1mH, IAS=-16A 2
Diode Forward Voltage VSD -1 V IS=-8A, VGS=0V, TJ=25°C 2
Continuous Source Current IS -16 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -64 A VG=VD=0V, Force Current 2
Forward Transconductance gfs 10 S VDS=-10V, ID=-8A 2
Total Gate Charge Qg 22 nC VDS=-30V, ID=-8A, VGS=-10V 3
Gate-Source Charge Qgs 4.1 nC VDS=-30V, ID=-8A, VGS=-10V 3
Gate-Drain Charge Qgd 5.2 nC VDS=-30V, ID=-8A, VGS=-10V 3
Turn-On Delay Time td(on) 13 ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω 3
Rise Time tr 42 ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω 3
Turn-Off Delay Time td(off) 65 ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω 3
Fall Time tf 16 ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω 3
Input Capacitance CISS 1256 pF VDS=-30V, VGS=0V, f=1.0MHz 3
Output Capacitance COSS 87 pF VDS=-30V, VGS=0V, f=1.0MHz 3
Reverse Transfer Capacitance CRSS 59 pF VDS=-30V, VGS=0V, f=1.0MHz 3
Gate Resistance Rg 15 Ω VGS=VDS=0V, f=1.0MHz 3

CAD (KiCad official)

  • Symbol: MSD60P16
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: msd60p16-etched.step / msd60p16-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); msd60p16.step / msd60p16.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Bruckewell datasheet (6 pp, sha256 91b2f25bbcbcad12, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF