# MSD100P12

**Bruckewell** · MOSFETs · TO-252

MSD100P12 from Bruckewell, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V, with threshold of -1.0 to -2.5 V at ID = -250 µA. |
| 2 | D | passive | Drain (center lead, also connected to the tab); drain-source voltage rated -100 V and continuous drain current -12 A at TC = 25°C. |
| 3 | S | passive | Source; continuous source current rated -12 A and pulsed source current -24 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Bruckewell |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -100 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current | ID |  |  | -12 | A | TC =25°C | 2 |
| Continuous Drain Current | ID |  |  | -7.8 | A | TC =100°C | 2 |
| Pulsed Drain Current | IDM |  |  | -24 | A |  | 2 |
| Single Pulse Avalanche Current | IAS |  |  | -14 | A | L =0.5mH | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 49 | mJ | L =0.5mH | 2 |
| Power Dissipation | PD |  |  | 38 | W | TC =25°C | 2 |
| Power Dissipation | PD |  |  | 2 | W | TA =25°C | 2 |
| Operating Junction and Storage Temperature | TJ/TSTG | -55 |  | 150 | °C |  | 2 |
| Maximum Junction-to-Ambient | RθJA |  |  | 62.5 | °C/W | surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 2 |
| Maximum Junction-to-Case | RθJC |  |  | 2.8 | °C/W |  | 2 |
| Gate Threshold Voltage | VGS (th) | -1 | -1.9 | -2.5 | V | VDS =VGS, ID =-250µA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -100 |  |  | V | VGS =0V, ID =-250µA | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | µA | VDS =-100V, VGS =0V, TJ =25°C | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -10 | µA | VDS =-80V, VGS =0V, TJ =125°C | 2 |
| Static Drain-Source On-Resistance | RDS (on) |  | 170 | 210 | mΩ | VGS =-10V, ID =-5A | 2 |
| Static Drain-Source On-Resistance | RDS (on) |  | 190 | 240 | mΩ | VGS =-4.5V, ID =-3A | 2 |
| Single Pulse Avalanche Energy | EAS | 25 |  |  | mJ | VDD =-25V, L =0.5mH, IAS =-10A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | IS =-5A, VGS =0V, TJ =25°C | 2 |
| Continuous Source Current | IS |  |  | -12 | A |  | 2 |
| Pulsed Source Current | ISM |  |  | -24 | A | VG =VD =0V, Force Current | 2 |

## CAD (KiCad official)

- Symbol: `MSD100P12`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `msd100p12-etched.step` / `msd100p12-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `msd100p12.step` / `msd100p12.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Bruckewell datasheet](docs/msd100p12-datasheet.pdf) (6 pp, sha256 `eeca7963ecf72287`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/msd100p12-datasheet.pdf)