component
MSD100P12
Public Made by Adomby adom
Bruckewell MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMSD100P12
Bruckewell · MOSFETs · TO-252
MSD100P12 from Bruckewell, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V, with threshold of -1.0 to -2.5 V at ID = -250 µA. |
| 2 | D | passive | Drain (center lead, also connected to the tab); drain-source voltage rated -100 V and continuous drain current -12 A at TC = 25°C. |
| 3 | S | passive | Source; continuous source current rated -12 A and pulsed source current -24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bruckewell |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -12 | A | TC =25°C | 2 | ||
| Continuous Drain Current | ID | -7.8 | A | TC =100°C | 2 | ||
| Pulsed Drain Current | IDM | -24 | A | 2 | |||
| Single Pulse Avalanche Current | IAS | -14 | A | L =0.5mH | 2 | ||
| Single Pulse Avalanche Energy | EAS | 49 | mJ | L =0.5mH | 2 | ||
| Power Dissipation | PD | 38 | W | TC =25°C | 2 | ||
| Power Dissipation | PD | 2 | W | TA =25°C | 2 | ||
| Operating Junction and Storage Temperature | TJ/TSTG | -55 | 150 | °C | 2 | ||
| Maximum Junction-to-Ambient | RθJA | 62.5 | °C/W | surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 2 | ||
| Maximum Junction-to-Case | RθJC | 2.8 | °C/W | 2 | |||
| Gate Threshold Voltage | VGS (th) | -1 | -1.9 | -2.5 | V | VDS =VGS, ID =-250µA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS =0V, ID =-250µA | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | µA | VDS =-100V, VGS =0V, TJ =25°C | 2 | ||
| Drain-Source Leakage Current | IDSS | -10 | µA | VDS =-80V, VGS =0V, TJ =125°C | 2 | ||
| Static Drain-Source On-Resistance | RDS (on) | 170 | 210 | mΩ | VGS =-10V, ID =-5A | 2 | |
| Static Drain-Source On-Resistance | RDS (on) | 190 | 240 | mΩ | VGS =-4.5V, ID =-3A | 2 | |
| Single Pulse Avalanche Energy | EAS | 25 | mJ | VDD =-25V, L =0.5mH, IAS =-10A | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | IS =-5A, VGS =0V, TJ =25°C | 2 | ||
| Continuous Source Current | IS | -12 | A | 2 | |||
| Pulsed Source Current | ISM | -24 | A | VG =VD =0V, Force Current | 2 |
CAD (KiCad official)
- Symbol:
MSD100P12 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
msd100p12-etched.step/msd100p12-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msd100p12.step/msd100p12.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bruckewell datasheet (6 pp, sha256
eeca7963ecf72287, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).