component
MS80N03
Public Made by Adomby adom
MSKSEMI MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MS80N03
MSKSEMI · MOSFETs · TO-252-2
MS80N03 from MSKSEMI, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±20 V maximum and a gate threshold of 1.0 to 2.5 V. |
| 2 | D | passive | Drain (also the tab); VDS is rated at 30 V and continuous drain current is 80 A at TC=25℃. |
| 3 | S | passive | Source; connected to the body diode anode, with a maximum diode forward voltage VSD of 1.2 V at 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current-Continuous | ID | 80 | A | TC=25℃ (Note 3) | 2 | ||
| Drain Current-Continuous | ID | 63 | A | TC=100℃ (Note 3) | 2 | ||
| Drain Current-Pulsed | IDM | 200 | A | Note 1: repetitive, pulse width limited by maximum junction temperature | 2 | ||
| Avalanche Energy | EAS | 280 | mJ | Note 4: L=0.5mH, VDD=15V, VG=10V, VGATE=30V, Start TJ=25℃ | 2 | ||
| Avalanche Current | IAS | 33 | A | 2 | |||
| Maximum Power Dissipation | PD | 105 | W | TC=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, IDS=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=30V, VGS=0V | 3 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS=VGS, IDS=250uA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | 3.5 | 5.5 | mΩ | VGS=10V, IDS=30A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 7 | 8.9 | mΩ | VGS=4.5V, IDS=20A | 3 | |
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IDS=20A | 3 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 3.3 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
MS80N03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
ms80n03-etched.step/ms80n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms80n03.step/ms80n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (8 pp, sha256
483c2feb060175be, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MS80N03
**MSKSEMI** · MOSFETs · TO-252-2
MS80N03 from MSKSEMI, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±20 V maximum and a gate threshold of 1.0 to 2.5 V. |
| 2 | D | passive | Drain (also the tab); VDS is rated at 30 V and continuous drain current is 80 A at TC=25℃. |
| 3 | S | passive | Source; connected to the body diode anode, with a maximum diode forward voltage VSD of 1.2 V at 20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Drain Current-Continuous | ID | | | 80 | A | TC=25℃ (Note 3) | 2 |
| Drain Current-Continuous | ID | | | 63 | A | TC=100℃ (Note 3) | 2 |
| Drain Current-Pulsed | IDM | | | 200 | A | Note 1: repetitive, pulse width limited by maximum junction temperature | 2 |
| Avalanche Energy | EAS | | | 280 | mJ | Note 4: L=0.5mH, VDD=15V, VG=10V, VGATE=30V, Start TJ=25℃ | 2 |
| Avalanche Current | IAS | | | 33 | A | | 2 |
| Maximum Power Dissipation | PD | | | 105 | W | TC=25℃ | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, IDS=250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=30V, VGS=0V | 3 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS=VGS, IDS=250uA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | | 3.5 | 5.5 | mΩ | VGS=10V, IDS=30A | 3 |
| Drain-Source On-State Resistance | RDS(ON) | | 7 | 8.9 | mΩ | VGS=4.5V, IDS=20A | 3 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IDS=20A | 3 |
| Thermal Resistance, Junction-to-Case | RθJC | | 3.3 | | ℃/W | | 2 |
## CAD (KiCad official)
- Symbol: `MS80N03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `ms80n03-etched.step` / `ms80n03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ms80n03.step` / `ms80n03.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8555434919069270016) (8 pp, sha256 `483c2feb060175be`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ms80n03-datasheet.pdf)