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MS80N03

Public Made by Adom

by adom

MSKSEMI MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MS80N03

MSKSEMI · MOSFETs · TO-252-2

MS80N03 from MSKSEMI, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±20 V maximum and a gate threshold of 1.0 to 2.5 V.
2 D passive Drain (also the tab); VDS is rated at 30 V and continuous drain current is 80 A at TC=25℃.
3 S passive Source; connected to the body diode anode, with a maximum diode forward voltage VSD of 1.2 V at 20 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current-Continuous ID 80 A TC=25℃ (Note 3) 2
Drain Current-Continuous ID 63 A TC=100℃ (Note 3) 2
Drain Current-Pulsed IDM 200 A Note 1: repetitive, pulse width limited by maximum junction temperature 2
Avalanche Energy EAS 280 mJ Note 4: L=0.5mH, VDD=15V, VG=10V, VGATE=30V, Start TJ=25℃ 2
Avalanche Current IAS 33 A 2
Maximum Power Dissipation PD 105 W TC=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=30V, VGS=0V 3
Gate-Body Leakage IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage VGS(TH) 1 1.7 2.5 V VDS=VGS, IDS=250uA 3
Drain-Source On-State Resistance RDS(ON) 3.5 5.5 mΩ VGS=10V, IDS=30A 3
Drain-Source On-State Resistance RDS(ON) 7 8.9 mΩ VGS=4.5V, IDS=20A 3
Drain-Source Diode Forward Voltage VSD 1.2 V VGS=0V, IDS=20A 3
Thermal Resistance, Junction-to-Case RθJC 3.3 ℃/W 2

CAD (KiCad official)

  • Symbol: MS80N03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: ms80n03-etched.step / ms80n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms80n03.step / ms80n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (8 pp, sha256 483c2feb060175be, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF