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Ray Publish 0.1.0 78aaec6 16d ago

MS8001B

MIRACLE POWER · MOSFETs · TO-263

MS8001B from MIRACLE POWER, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20V with threshold VGS(th) of 2.0V to 4.0V at ID = 250μA.
2 D passive Drain, connected to the exposed tab (middle lead is shortened in the package drawing); rated 85V VDS and 120A continuous at TC = 25°C.
3 S passive Source; carries up to 120A continuous at TC = 25°C and 480A pulsed.

Key specifications

Parameter Value
Manufacturer MIRACLE POWER
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 85 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 85V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 4.3 5.3 mΩ VGS = 10V, ID = 20A 2
Drain-Source Diode Forward Continuous Current IS 120 A VG=VD=0V, Force Current 2
Maximum Pulsed Current ISM 480 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 50A 2
Drain-Source Voltage VDS 85 V Note a: TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 120 A TC = 25°C 1
Drain Current-Continuous ID 87.4 A TC = 100°C 1
Drain Current-Pulsed IDM 480 A Note b: Repetitive rating; pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 173.6 W TJ = 25°C 1
Single Pulsed Avalanche Energy EAS 400 mJ Note c: L = 0.5mH, VDD = 50V, IAS = 40A, RG = 25Ω, Starting TJ = 25 ℃ 1
Operating and Store Temperature Range TJ, TSTG -55 150 °C Operating and Store Temperature Range 1
Thermal Resistance, Junction to Case RθJC 0.72 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W 1

CAD (KiCad official)

  • Symbol: MS8001B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ms8001b-etched.step / ms8001b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms8001b.step / ms8001b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MIRACLE POWER datasheet (6 pp, sha256 0fe866e2fcb3b5d1, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF