component
MS8001B
Public Made by Adomby adom
MIRACLE POWER MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| ms8001b-etched.glb | 16d ago |
| ms8001b-etched.step | 16d ago |
| ms8001b-hero.glb | 16d ago |
| ms8001b-hero.overlay.json | 16d ago |
| ms8001b.glb | 16d ago |
| ms8001b.kicad_mod | 16d ago |
| ms8001b.kicad_sym | 16d ago |
| ms8001b.lbr | 16d ago |
| ms8001b.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
MS8001B
MIRACLE POWER · MOSFETs · TO-263
MS8001B from MIRACLE POWER, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V with threshold VGS(th) of 2.0V to 4.0V at ID = 250μA. |
| 2 | D | passive | Drain, connected to the exposed tab (middle lead is shortened in the package drawing); rated 85V VDS and 120A continuous at TC = 25°C. |
| 3 | S | passive | Source; carries up to 120A continuous at TC = 25°C and 480A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MIRACLE POWER |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 85 | V | VGS = 0V, ID = 250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 85V, VGS = 0V | 1 | ||
| Forward Gate Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 1 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 4.3 | 5.3 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Drain-Source Diode Forward Continuous Current | IS | 120 | A | VG=VD=0V, Force Current | 2 | ||
| Maximum Pulsed Current | ISM | 480 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 50A | 2 | ||
| Drain-Source Voltage | VDS | 85 | V | Note a: TJ = +25 ℃ to +150 ℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 120 | A | TC = 25°C | 1 | ||
| Drain Current-Continuous | ID | 87.4 | A | TC = 100°C | 1 | ||
| Drain Current-Pulsed | IDM | 480 | A | Note b: Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 173.6 | W | TJ = 25°C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 400 | mJ | Note c: L = 0.5mH, VDD = 50V, IAS = 40A, RG = 25Ω, Starting TJ = 25 ℃ | 1 | ||
| Operating and Store Temperature Range | TJ, TSTG | -55 | 150 | °C | Operating and Store Temperature Range | 1 | |
| Thermal Resistance, Junction to Case | RθJC | 0.72 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
MS8001B - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ms8001b-etched.step/ms8001b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms8001b.step/ms8001b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MIRACLE POWER datasheet (6 pp, sha256
0fe866e2fcb3b5d1, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).