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MS6N100FE

MASPOWER · MOSFETs · TO-263

MS6N100FE from MASPOWER, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; absolute maximum VGSS ±20 V continuous (±30 V transient) with threshold VGS(th) 2.0 to 4.0 V at ID=250 µA.
2 D passive Drain (also the metal tab); VDSS 1000 V, continuous ID 6 A at TC=25℃ and 3.8 A at TC=100℃.
3 S passive Source; continuous body-diode current IS 6 A and pulsed ISM 18 A.

Key specifications

Parameter Value
Manufacturer MASPOWER
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 1000 V Tc=25℃ 1
Transient Gate-Source Voltage VGSM -30 30 V Tc=25℃ 1
Continuous Gate-Source Voltage (DC) VGSS -20 20 V Tc=25℃ 1
Drain Current-continuous ID 6 A TC=25℃ 1
Drain Current-continuous ID 3.8 A TC=100℃ 1
Drain Current-pulse IDM 18 A note 1; limited by maximum junction temperature 1
Single pulse avalanche energy EAS 160 mJ L=10mH, IAS=6A, VDD=100V, RG=25Ω, Starting TJ=25℃ 1
Avalanche Current IAR 6 A note 1 1
Repetitive Avalanche Energy EAR 2 mJ note 1 1
Peak Diode Recovery dv/dt dv/dt 4 V/ns 1
Power Dissipation (TO-220/TO-263) PD 198 W Tc=25℃ 1
Operating and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Maximum Lead Temperature for Soldering TL 300 ℃ 2
Drain-Source Breakdown Voltage BVDSS 1000 V ID=250μA,VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=1000V,VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=800V,TC=125℃ 2
Gate body leakage current IGSS -100 100 nA VDS=0V,VGS=±30V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS,ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 2.6 3.3 Ω VGS=10V,ID=2A,TC=25℃ 2
Diode Forward Voltage VSD 1.4 V VGS=0V,IS=6A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 18 A 3
Maximum Continuous Drain Source Diode Forward Current IS 6 A 3
Thermal Resistance, junction to Case Rth(j-C) 0.63 ℃/W TO-220/TO-263 3
Thermal Resistance, Junction to Ambient Rth(j-A) 48 ℃/W TO-220/TO-263 3
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.9 V/℃ ID=250μA, referenced to 25℃ 2
Forward Transconductance gFS 7.7 S VDS=40V,ID=4A (note 4) 2
Input capacitance Ciss 651 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Output capacitance Coss 77 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Reverse transfer capacitance Crss 15 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Turn-On delay time td(on) 12.6 ns VDD=450V,ID=4A, RGEN=25Ω (note 4,5) 2
Turn-On rise time tr 25 ns VDD=450V,ID=4A, RGEN=25Ω (note 4,5) 2
Turn-Off delay time td(Off) 46.2 ns VDD=450V,ID=4A, RGEN=25Ω (note 4,5) 2
Turn-Off rise time tf 31 ns VDD=450V,ID=4A, RGEN=25Ω (note 4,5) 3
Total Gate Charge Qg 14.7 nC VDS=720V,ID=4A, VGS=10V (note 4,5) 3
Gate-Source charge Qgs 4 nC VDS=720V,ID=4A, VGS=10V (note 4,5) 3
Gate-Drain charge Qgd 4.53 nC VDS=720V,ID=4A, VGS=10V (note 4,5) 3
Reverse recovery time trr 467 ns VGS=0V, IS=4A, dIF/dt=100A/μs (note 4) 3
Reverse recovery charge Qrr 2235 μC VGS=0V, IS=4A, dIF/dt=100A/μs (note 4) 3

CAD (KiCad official)

  • Symbol: MS6N100FE
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ms6n100fe-etched.step / ms6n100fe-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms6n100fe.step / ms6n100fe.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MASPOWER datasheet (9 pp, sha256 ca0716b7527f7e9f, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF