component
MS6N100FE
Public Made by Adomby adom
MASPOWER MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMS6N100FE
MASPOWER · MOSFETs · TO-263
MS6N100FE from MASPOWER, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; absolute maximum VGSS ±20 V continuous (±30 V transient) with threshold VGS(th) 2.0 to 4.0 V at ID=250 µA. |
| 2 | D | passive | Drain (also the metal tab); VDSS 1000 V, continuous ID 6 A at TC=25℃ and 3.8 A at TC=100℃. |
| 3 | S | passive | Source; continuous body-diode current IS 6 A and pulsed ISM 18 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MASPOWER |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 1000 | V | Tc=25℃ | 1 | ||
| Transient Gate-Source Voltage | VGSM | -30 | 30 | V | Tc=25℃ | 1 | |
| Continuous Gate-Source Voltage (DC) | VGSS | -20 | 20 | V | Tc=25℃ | 1 | |
| Drain Current-continuous | ID | 6 | A | TC=25℃ | 1 | ||
| Drain Current-continuous | ID | 3.8 | A | TC=100℃ | 1 | ||
| Drain Current-pulse | IDM | 18 | A | note 1; limited by maximum junction temperature | 1 | ||
| Single pulse avalanche energy | EAS | 160 | mJ | L=10mH, IAS=6A, VDD=100V, RG=25Ω, Starting TJ=25℃ | 1 | ||
| Avalanche Current | IAR | 6 | A | note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 2 | mJ | note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4 | V/ns | 1 | |||
| Power Dissipation (TO-220/TO-263) | PD | 198 | W | Tc=25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | ℃ | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 1000 | V | ID=250μA,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=1000V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=800V,TC=125℃ | 2 | ||
| Gate body leakage current | IGSS | -100 | 100 | nA | VDS=0V,VGS=±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS,ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.6 | 3.3 | Ω | VGS=10V,ID=2A,TC=25℃ | 2 | |
| Diode Forward Voltage | VSD | 1.4 | V | VGS=0V,IS=6A | 3 | ||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 18 | A | 3 | |||
| Maximum Continuous Drain Source Diode Forward Current | IS | 6 | A | 3 | |||
| Thermal Resistance, junction to Case | Rth(j-C) | 0.63 | ℃/W | TO-220/TO-263 | 3 | ||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 48 | ℃/W | TO-220/TO-263 | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.9 | V/℃ | ID=250μA, referenced to 25℃ | 2 | ||
| Forward Transconductance | gFS | 7.7 | S | VDS=40V,ID=4A (note 4) | 2 | ||
| Input capacitance | Ciss | 651 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 | ||
| Output capacitance | Coss | 77 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 | ||
| Reverse transfer capacitance | Crss | 15 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 | ||
| Turn-On delay time | td(on) | 12.6 | ns | VDD=450V,ID=4A, RGEN=25Ω (note 4,5) | 2 | ||
| Turn-On rise time | tr | 25 | ns | VDD=450V,ID=4A, RGEN=25Ω (note 4,5) | 2 | ||
| Turn-Off delay time | td(Off) | 46.2 | ns | VDD=450V,ID=4A, RGEN=25Ω (note 4,5) | 2 | ||
| Turn-Off rise time | tf | 31 | ns | VDD=450V,ID=4A, RGEN=25Ω (note 4,5) | 3 | ||
| Total Gate Charge | Qg | 14.7 | nC | VDS=720V,ID=4A, VGS=10V (note 4,5) | 3 | ||
| Gate-Source charge | Qgs | 4 | nC | VDS=720V,ID=4A, VGS=10V (note 4,5) | 3 | ||
| Gate-Drain charge | Qgd | 4.53 | nC | VDS=720V,ID=4A, VGS=10V (note 4,5) | 3 | ||
| Reverse recovery time | trr | 467 | ns | VGS=0V, IS=4A, dIF/dt=100A/μs (note 4) | 3 | ||
| Reverse recovery charge | Qrr | 2235 | μC | VGS=0V, IS=4A, dIF/dt=100A/μs (note 4) | 3 |
CAD (KiCad official)
- Symbol:
MS6N100FE - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ms6n100fe-etched.step/ms6n100fe-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms6n100fe.step/ms6n100fe.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MASPOWER datasheet (9 pp, sha256
ca0716b7527f7e9f, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).