# MS4559

**MSKSEMI** · MOSFETs · SOP-8

MS4559 from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1); N-channel VDS is 60 V and continuous ID is 4.8 A at TA=25℃. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1); VGS maximum is ±20 V with a threshold of 1.2 to 2.5 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2); P-channel VDS is -60 V and continuous ID is -3.7 A at TA=25℃. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2); VGS maximum is ±20 V with a threshold of -1.2 to -2.5 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), shorted to pins 6 externally on the package outline; pulsed drain current is -7.5 A. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2); drain-source voltage rating is -60 V. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1); drain-source voltage rating is 60 V. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1); pulsed drain current is 9.6 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-channel Drain-Source Voltage | VDS |  |  | 60 | V |  | 2 |
| P-channel Drain-Source Voltage | VDS | -60 |  |  | V |  | 2 |
| N-channel Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| P-channel Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| N-channel Continuous Drain Current | ID@TA=25℃ |  |  | 4.8 | A | TA=25℃, VGS @ 10V | 2 |
| P-channel Continuous Drain Current | ID@TA=25℃ | -3.7 |  |  | A | TA=25℃, VGS @ 10V | 2 |
| N-channel Continuous Drain Current | ID@TA=70℃ |  |  | 3.8 | A | TA=70℃, VGS @ 10V | 2 |
| P-channel Continuous Drain Current | ID@TA=70℃ | -3 |  |  | A | TA=70℃, VGS @ 10V | 2 |
| N-channel Pulsed Drain Current | IDM |  |  | 9.6 | A |  | 2 |
| P-channel Pulsed Drain Current | IDM | -7.5 |  |  | A |  | 2 |
| N-channel Single Pulse Avalanche Energy | EAS |  |  | 25.5 | mJ | Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=22.6A | 2 |
| P-channel Single Pulse Avalanche Energy | EAS |  |  | 35.3 | mJ | Note 3: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A | 2 |
| N-channel Avalanche Current | IAS |  |  | 22.6 | A |  | 2 |
| P-channel Avalanche Current | IAS | -26.6 |  |  | A |  | 2 |
| Total Power Dissipation (shared N and P rating) | PD@TA=25℃ |  |  | 1.5 | W | TA=25℃ | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 85 | ℃/W |  | 2 |
| Thermal Resistance Junction-Case | RθJC |  |  | 36 | ℃/W |  | 2 |
| N-channel Continuous Source Current | IS |  |  | 4.8 | A | VG=VD=0V, Force Current | 3 |
| N-channel Pulsed Source Current | ISM |  |  | 9.6 | A |  | 3 |
| N-channel Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |
| P-channel Continuous Source Current | IS |  |  | -3.7 | A | VG=VD=0V, Force Current | 4 |
| P-channel Pulsed Source Current | ISM |  |  | -7.5 | A |  | 4 |
| P-channel Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 4 |
| N-channel Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 3 |
| N-channel Static Drain-Source On-Resistance | RDS(ON) |  | 65 | 80 | mΩ | VGS=10V, ID=4A | 3 |
| N-channel Static Drain-Source On-Resistance | RDS(ON) |  | 75 | 95 | mΩ | VGS=4.5V, ID=2A | 3 |
| N-channel Gate Threshold Voltage | VGS(th) | 1.2 |  | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| N-channel Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 3 |
| N-channel Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 3 |
| N-channel Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-channel Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250uA | 4 |
| P-channel Static Drain-Source On-Resistance | RDS(ON) |  | 75 | 90 | mΩ | VGS=-10V, ID=-3A | 4 |
| P-channel Static Drain-Source On-Resistance | RDS(ON) |  | 90 | 125 | mΩ | VGS=-4.5V, ID=-2A | 4 |
| P-channel Gate Threshold Voltage | VGS(th) | -1.2 |  | -2.5 | V | VGS=VDS, ID=-250uA | 4 |
| P-channel Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 4 |
| P-channel Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 4 |
| P-channel Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 4 |

## CAD (KiCad official)

- Symbol: `MS4559`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ms4559-etched.step` / `ms4559-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ms4559.step` / `ms4559.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](docs/ms4559-datasheet.pdf) (10 pp, sha256 `ce9972434b5600dd`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ms4559-datasheet.pdf)